Properties of TiO<sub>2</sub> and SiO<sub>2</sub> thin films deposited using ion assisted deposition

John R. McNeil; G. A. Al-Jumaily; K. C. Jungling; A. C. Barron

doi:10.1364/AO.24.000486

Properties of TiO₂ and SiO₂ thin films deposited using ion assisted deposition

John R. McNeil, G. A. Al-Jumaily, K. C. Jungling, and A. C. Barron

Applied Optics
Vol. 24,
Issue 4,
pp. 486-489
(1985)
•https://doi.org/10.1364/AO.24.000486

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John R. McNeil, G. A. Al-Jumaily, K. C. Jungling, and A. C. Barron, "Properties of TiO₂ and SiO₂ thin films deposited using ion assisted deposition," Appl. Opt. 24, 486-489 (1985)

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History
- Original Manuscript: June 21, 1984
- Published: February 15, 1985

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Abstract

TiO₂ and SiO₂ films deposited using ion assisted deposition are investigated as a function of ion energy and current density. Optical constants, possible ion source contaminants, and optical scatter are examined for samples deposited at ambient (∼75°C) and elevated (∼250°C) substrate temperatures.

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R	= 2–5 Å/sec
T_sub	∼50–100°C (ambient)
T_sub	≃ 250°C (heated)
$J O^{+} / O_{2}^{+}$	= 0–300 μA/cm²
$Γ O^{+} / O_{2}^{+}$	= 0–2 × 10¹⁵ (cm² sec)⁻¹
P_O₂	≃1 × 10⁻⁴ Torr
Γ_O₂	≃ 3 × 10¹⁶ (cm² sec)⁻¹

J μA/cm²	W%	C%	H%	n
T = 250°C
0	0.000	0.79	2.4	2.3
3	0.015	0.82	2.0	2.4
15	0.013	0.97	2.7	2.5
30		4.5	2.4	2.5
T = Ambient (75 ≃ 100°C)
0	0.000	0.15	4.0	2.0^a
3	0.020	0.16	3.5	2.3^a
15	0.040	0.22	2.4	2.3^a

J μA/cm²	W%	C%	H%	Ni%	n
T = 250°C
0	0.000	1.3	3.2	<0.005	2.3
120	0.028	1.4	3.5	<0.005	2.3
240	0.051	1.2	3.4	<0.005	2.4
T = Ambient (∼100°C)
0	0.000	0.22	4.0	<0.005	2.0^a
120	0.040	0.28	3.8	<0.005	2.2

R	= 2–5 Å/sec
T_sub	∼50–100°C (ambient)
T_sub	≃ 250°C (heated)
$J O^{+} / O_{2}^{+}$	= 0–300 μA/cm²
$Γ O^{+} / O_{2}^{+}$	= 0–2 × 10¹⁵ (cm² sec)⁻¹
P_O₂	≃1 × 10⁻⁴ Torr
Γ_O₂	≃ 3 × 10¹⁶ (cm² sec)⁻¹

J μA/cm²	W%	C%	H%	n
T = 250°C
0	0.000	0.79	2.4	2.3
3	0.015	0.82	2.0	2.4
15	0.013	0.97	2.7	2.5
30		4.5	2.4	2.5
T = Ambient (75 ≃ 100°C)
0	0.000	0.15	4.0	2.0^a
3	0.020	0.16	3.5	2.3^a
15	0.040	0.22	2.4	2.3^a

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