Abstract
A sputter-deposited trilayer structure of the form Al:fluorocarbon:Al has been developed which exhibits very high carrier-to-noise ratios (~60 dB) at acceptable power levels. It performs well on systems based on either the Ar+ laser or the GaAs diode laser. The high performance is due to bubble formation in the spacer layer. The structure can be overcoated with no qualitative change in performance properties and an acceptable (20–50%) increase in power requirements.
© 1984 Optical Society of America
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