Abstract

The concept of illuminating a silicon photodetector along an edge to increase the light propagation path through the depletion region and thus to increase quantum efficiency at near IR wavelengths is introduced. Quantum efficiency measurements using both a GaAlAs laser and a He–Ne laser are included. These measurements show an improvement in quantum efficiency at λ = 0.83 μm for edge illumination over normal incidence of 75% for a photodiode and of 142% for a MOS capacitor photosensor.

© 1983 Optical Society of America

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References

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  1. G. M. Borsuk, Proc. IEEE 69, 100 (1981).
    [CrossRef]
  2. W. C. Dash, R. Newman, Phys. Rev. 99, 1151 (1955).
    [CrossRef]
  3. J. K. Rodman, J. T. Boyd, Solid-State Electron. 23, 1029 (1980).
    [CrossRef]
  4. F. Scincariello, in Proceedings, Conference on CCD Technology and Applications (1976), p. 83.
  5. D. B. Lee, J. Appl. Phys. 41, 4569 (1969).
    [CrossRef]
  6. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
  7. EG&G Data Sheet (EG&G, Salem, Mass. 01970, 1974).

1981 (1)

G. M. Borsuk, Proc. IEEE 69, 100 (1981).
[CrossRef]

1980 (1)

J. K. Rodman, J. T. Boyd, Solid-State Electron. 23, 1029 (1980).
[CrossRef]

1976 (1)

F. Scincariello, in Proceedings, Conference on CCD Technology and Applications (1976), p. 83.

1969 (1)

D. B. Lee, J. Appl. Phys. 41, 4569 (1969).
[CrossRef]

1955 (1)

W. C. Dash, R. Newman, Phys. Rev. 99, 1151 (1955).
[CrossRef]

Borsuk, G. M.

G. M. Borsuk, Proc. IEEE 69, 100 (1981).
[CrossRef]

Boyd, J. T.

J. K. Rodman, J. T. Boyd, Solid-State Electron. 23, 1029 (1980).
[CrossRef]

Dash, W. C.

W. C. Dash, R. Newman, Phys. Rev. 99, 1151 (1955).
[CrossRef]

Lee, D. B.

D. B. Lee, J. Appl. Phys. 41, 4569 (1969).
[CrossRef]

Newman, R.

W. C. Dash, R. Newman, Phys. Rev. 99, 1151 (1955).
[CrossRef]

Rodman, J. K.

J. K. Rodman, J. T. Boyd, Solid-State Electron. 23, 1029 (1980).
[CrossRef]

Scincariello, F.

F. Scincariello, in Proceedings, Conference on CCD Technology and Applications (1976), p. 83.

Sze, S. M.

S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).

J. Appl. Phys. (1)

D. B. Lee, J. Appl. Phys. 41, 4569 (1969).
[CrossRef]

Phys. Rev. (1)

W. C. Dash, R. Newman, Phys. Rev. 99, 1151 (1955).
[CrossRef]

Proc. IEEE (1)

G. M. Borsuk, Proc. IEEE 69, 100 (1981).
[CrossRef]

Proceedings, Conference on CCD Technology and Applications (1)

F. Scincariello, in Proceedings, Conference on CCD Technology and Applications (1976), p. 83.

Solid-State Electron. (1)

J. K. Rodman, J. T. Boyd, Solid-State Electron. 23, 1029 (1980).
[CrossRef]

Other (2)

S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).

EG&G Data Sheet (EG&G, Salem, Mass. 01970, 1974).

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Figures (3)

Fig. 1
Fig. 1

Photodetector configuration used for edge illumination.

Fig. 2
Fig. 2

Photodiode and MOS capacitor sensor along with their output amplifier device configurations.

Fig. 3
Fig. 3

Fabricated device configuration shown schematically in Fig. 2: (a) 3.5×; (b) 10×.

Tables (1)

Tables Icon

Table I Quantum Efficiency Obtained for Different Cases

Equations (4)

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η = ( I p / q ) / ( P / h ν ) ,
Δ V G = Δ V 0 / A υ .
Q s = Δ V G C e ,
I eff = Q s / Δ t .

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