Abstract

Vanadium dioxide (VO2) film which has nearly the same transition point as single crystal has been obtained by reactive evaporation of vanadium on glass and subsequent annealing in N2 gas. Relations between optical properties of VO2 film and its preparation conditions are presented. We made optical direct bit recording on VO2 film using a laser diode as the light source. The threshold recording energy and bit density are 2 mJ/cm2 and 350 bits/mm, respectively. We also made tungsten doping to lower the VO2 film transition temperature.

© 1983 Optical Society of America

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  1. R. Bernhard, IEEE Spectrum 16, 28 (Dec.1979).
  2. K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).
  3. P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
    [CrossRef]
  4. S. Yonezawa, in Technical Digest, Conference on Lasers and Electrooptics (Optical Society of America, Washington, D.C., 1981), paper THG4.
  5. E. N. Fuls, D. H. Hensler, A. R. Ross, Appl. Phys. Lett. 10, 199 (1967).
    [CrossRef]
  6. J. Duchene, M. Terraillon, M. Pailly, Thin Solid Films 12, 231 (1972).
    [CrossRef]
  7. W. R. Roach, Appl. Phys. Lett. 19, 453 (1971).
    [CrossRef]
  8. A. W. Smith, Appl. Phys. Lett. 23, 437 (1973).
    [CrossRef]
  9. D. D. Eden, Opt. Eng. 20, 337 (1981).
  10. N. Kimizuka, M. Ishii, I. Kawada, M. Saeki, M. Nakahira, J. Solid State Chem. 9, 69 (1974).
    [CrossRef]
  11. G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
    [CrossRef]
  12. T. Horlin, T. Niklewski, M. Nygren, Mat. Res. Bull. 8, 179 (1973).
    [CrossRef]
  13. M. Nygren, M. Israelsson, Mater. Res. Bull. 4, 881 (1969).
    [CrossRef]
  14. M. Yamamoto, S. Yonezawa, S. Fukunishi, Trans. IECE J64-C, 732 (1981).
  15. Y. Mitsuhashi, T. Morikawa, K. Sakurai, M. Seko, J. Shimada, Opt. Commun. 17, 95 (1976).
    [CrossRef]

1981

D. D. Eden, Opt. Eng. 20, 337 (1981).

M. Yamamoto, S. Yonezawa, S. Fukunishi, Trans. IECE J64-C, 732 (1981).

1979

R. Bernhard, IEEE Spectrum 16, 28 (Dec.1979).

K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

1976

Y. Mitsuhashi, T. Morikawa, K. Sakurai, M. Seko, J. Shimada, Opt. Commun. 17, 95 (1976).
[CrossRef]

1974

N. Kimizuka, M. Ishii, I. Kawada, M. Saeki, M. Nakahira, J. Solid State Chem. 9, 69 (1974).
[CrossRef]

1973

T. Horlin, T. Niklewski, M. Nygren, Mat. Res. Bull. 8, 179 (1973).
[CrossRef]

A. W. Smith, Appl. Phys. Lett. 23, 437 (1973).
[CrossRef]

1972

G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
[CrossRef]

J. Duchene, M. Terraillon, M. Pailly, Thin Solid Films 12, 231 (1972).
[CrossRef]

1971

W. R. Roach, Appl. Phys. Lett. 19, 453 (1971).
[CrossRef]

1969

M. Nygren, M. Israelsson, Mater. Res. Bull. 4, 881 (1969).
[CrossRef]

1967

E. N. Fuls, D. H. Hensler, A. R. Ross, Appl. Phys. Lett. 10, 199 (1967).
[CrossRef]

Asbech, P. M.

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

Bernhard, R.

R. Bernhard, IEEE Spectrum 16, 28 (Dec.1979).

Bordet, A.

G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
[CrossRef]

Bulthuis, K.

K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).

Cammack, D. A.

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

Carasso, M. G.

K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).

Casalot, A.

G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
[CrossRef]

Daniele, J. J.

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

Duchene, J.

J. Duchene, M. Terraillon, M. Pailly, Thin Solid Films 12, 231 (1972).
[CrossRef]

Eden, D. D.

D. D. Eden, Opt. Eng. 20, 337 (1981).

Fukunishi, S.

M. Yamamoto, S. Yonezawa, S. Fukunishi, Trans. IECE J64-C, 732 (1981).

Fuls, E. N.

E. N. Fuls, D. H. Hensler, A. R. Ross, Appl. Phys. Lett. 10, 199 (1967).
[CrossRef]

Heemskerk, J. P. J.

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).

Hensler, D. H.

E. N. Fuls, D. H. Hensler, A. R. Ross, Appl. Phys. Lett. 10, 199 (1967).
[CrossRef]

Horlin, T.

T. Horlin, T. Niklewski, M. Nygren, Mat. Res. Bull. 8, 179 (1973).
[CrossRef]

Ishii, M.

N. Kimizuka, M. Ishii, I. Kawada, M. Saeki, M. Nakahira, J. Solid State Chem. 9, 69 (1974).
[CrossRef]

Israelsson, M.

M. Nygren, M. Israelsson, Mater. Res. Bull. 4, 881 (1969).
[CrossRef]

Kawada, I.

N. Kimizuka, M. Ishii, I. Kawada, M. Saeki, M. Nakahira, J. Solid State Chem. 9, 69 (1974).
[CrossRef]

Kimizuka, N.

N. Kimizuka, M. Ishii, I. Kawada, M. Saeki, M. Nakahira, J. Solid State Chem. 9, 69 (1974).
[CrossRef]

Kivits, P. J.

K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).

Kleuters, W. J.

K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

Launois, H.

G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
[CrossRef]

Lederer, P.

G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
[CrossRef]

Lou, D.

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

Mitsuhashi, Y.

Y. Mitsuhashi, T. Morikawa, K. Sakurai, M. Seko, J. Shimada, Opt. Commun. 17, 95 (1976).
[CrossRef]

Morikawa, T.

Y. Mitsuhashi, T. Morikawa, K. Sakurai, M. Seko, J. Shimada, Opt. Commun. 17, 95 (1976).
[CrossRef]

Nakahira, M.

N. Kimizuka, M. Ishii, I. Kawada, M. Saeki, M. Nakahira, J. Solid State Chem. 9, 69 (1974).
[CrossRef]

Niklewski, T.

T. Horlin, T. Niklewski, M. Nygren, Mat. Res. Bull. 8, 179 (1973).
[CrossRef]

Nygren, M.

T. Horlin, T. Niklewski, M. Nygren, Mat. Res. Bull. 8, 179 (1973).
[CrossRef]

M. Nygren, M. Israelsson, Mater. Res. Bull. 4, 881 (1969).
[CrossRef]

Ophey, W. H.

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

Pailly, M.

J. Duchene, M. Terraillon, M. Pailly, Thin Solid Films 12, 231 (1972).
[CrossRef]

Pouget, J. P.

G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
[CrossRef]

Roach, W. R.

W. R. Roach, Appl. Phys. Lett. 19, 453 (1971).
[CrossRef]

Ross, A. R.

E. N. Fuls, D. H. Hensler, A. R. Ross, Appl. Phys. Lett. 10, 199 (1967).
[CrossRef]

Saeki, M.

N. Kimizuka, M. Ishii, I. Kawada, M. Saeki, M. Nakahira, J. Solid State Chem. 9, 69 (1974).
[CrossRef]

Sakurai, K.

Y. Mitsuhashi, T. Morikawa, K. Sakurai, M. Seko, J. Shimada, Opt. Commun. 17, 95 (1976).
[CrossRef]

Seko, M.

Y. Mitsuhashi, T. Morikawa, K. Sakurai, M. Seko, J. Shimada, Opt. Commun. 17, 95 (1976).
[CrossRef]

Shimada, J.

Y. Mitsuhashi, T. Morikawa, K. Sakurai, M. Seko, J. Shimada, Opt. Commun. 17, 95 (1976).
[CrossRef]

Smith, A. W.

A. W. Smith, Appl. Phys. Lett. 23, 437 (1973).
[CrossRef]

Terraillon, M.

J. Duchene, M. Terraillon, M. Pailly, Thin Solid Films 12, 231 (1972).
[CrossRef]

Villeneuve, G.

G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
[CrossRef]

Yamamoto, M.

M. Yamamoto, S. Yonezawa, S. Fukunishi, Trans. IECE J64-C, 732 (1981).

Yonezawa, S.

M. Yamamoto, S. Yonezawa, S. Fukunishi, Trans. IECE J64-C, 732 (1981).

S. Yonezawa, in Technical Digest, Conference on Lasers and Electrooptics (Optical Society of America, Washington, D.C., 1981), paper THG4.

Zalm, P.

K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).

Appl. Phys. Lett.

P. M. Asbech, D. A. Cammack, J. J. Daniele, D. Lou, J. P. J. Heemskerk, W. J. Kleuters, W. H. Ophey, Appl. Phys. Lett. 34, 835 (1979).
[CrossRef]

E. N. Fuls, D. H. Hensler, A. R. Ross, Appl. Phys. Lett. 10, 199 (1967).
[CrossRef]

W. R. Roach, Appl. Phys. Lett. 19, 453 (1971).
[CrossRef]

A. W. Smith, Appl. Phys. Lett. 23, 437 (1973).
[CrossRef]

IEEE Spectrum

R. Bernhard, IEEE Spectrum 16, 28 (Dec.1979).

K. Bulthuis, M. G. Carasso, J. P. J. Heemskerk, P. J. Kivits, W. J. Kleuters, P. Zalm, IEEE Spectrum 16, 26 (Aug.1979).

J. Phys. Chem. Solids

G. Villeneuve, A. Bordet, A. Casalot, J. P. Pouget, H. Launois, P. Lederer, J. Phys. Chem. Solids 33, 1953 (1972).
[CrossRef]

J. Solid State Chem.

N. Kimizuka, M. Ishii, I. Kawada, M. Saeki, M. Nakahira, J. Solid State Chem. 9, 69 (1974).
[CrossRef]

Mat. Res. Bull.

T. Horlin, T. Niklewski, M. Nygren, Mat. Res. Bull. 8, 179 (1973).
[CrossRef]

Mater. Res. Bull.

M. Nygren, M. Israelsson, Mater. Res. Bull. 4, 881 (1969).
[CrossRef]

Opt. Commun.

Y. Mitsuhashi, T. Morikawa, K. Sakurai, M. Seko, J. Shimada, Opt. Commun. 17, 95 (1976).
[CrossRef]

Opt. Eng.

D. D. Eden, Opt. Eng. 20, 337 (1981).

Thin Solid Films

J. Duchene, M. Terraillon, M. Pailly, Thin Solid Films 12, 231 (1972).
[CrossRef]

Trans. IECE

M. Yamamoto, S. Yonezawa, S. Fukunishi, Trans. IECE J64-C, 732 (1981).

Other

S. Yonezawa, in Technical Digest, Conference on Lasers and Electrooptics (Optical Society of America, Washington, D.C., 1981), paper THG4.

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Figures (9)

Fig. 1
Fig. 1

Film composition after annealing reactive evaporated film for 4 h.

Fig. 2
Fig. 2

Reflectivity hysteresis at 0.814-μm wavelength for VO2 film annealed at 400, 450, and 500°C for 4 h.

Fig. 3
Fig. 3

Reflectivity vs temperature for W-doped VO2 film made by reactive cosputtering. Dotted line shows reflectivity hysteresis for VO2 film made by reactive sputtering.

Fig. 4
Fig. 4

W-atomic concentration in the VO2 film and reflectivity change at the transition point vs transition temperature.

Fig. 5
Fig. 5

Optical bit recording test system construction using a laser diode as the light source.

Fig. 6
Fig. 6

Oscilloscope figures of reflected light from VO2 film surface: (a) at biased temperature TB 64°C before bit recording; (b) at same TB after bit recording with 0.5-μsec duration 1-mW pulse light. Erasing process by decreasing TB is (c) at 60°C reflectivity change of bits decrease; (d) bits disappear at 50°C.

Fig. 7
Fig. 7

Biased temperature TB dependence of readout efficiency η at same recording conditions. (Incident light pulse, 1 mW, 0.5-μsec duration).

Fig. 8
Fig. 8

Recorded bits readout efficiency vs incident light pulse energy on VO2 film.

Fig. 9
Fig. 9

Recorded bits readout efficiency vs bit-to-bit distance D. D is measured between the centers of the adjacent bits.

Tables (2)

Tables Icon

Table I Film Composition Obtained from Activation Energy

Tables Icon

Table II Optical Recording Performance of VO2 Film

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