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  1. M. Hasselbeck, H‥ S. Kwok, Appl. Phys. Lett. 41, 1138 (1982).
    [CrossRef]
  2. M. Haselbeck, H. S. Kwok, J. Appl. Phys. 54, 3626 (1983).
    [CrossRef]
  3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
  4. G. Mourou, C. V. Stancampiano, A. Antonetti, A. Orszag, Appl. Phys. Lett. 39, 295 (1981).
    [CrossRef]
  5. L. Huang, M. Hasselbeck, S. C. Hsu, H. S. Kwok, to be published in Rev. Sci. Instrum.

1983 (1)

M. Haselbeck, H. S. Kwok, J. Appl. Phys. 54, 3626 (1983).
[CrossRef]

1982 (1)

M. Hasselbeck, H‥ S. Kwok, Appl. Phys. Lett. 41, 1138 (1982).
[CrossRef]

1981 (1)

G. Mourou, C. V. Stancampiano, A. Antonetti, A. Orszag, Appl. Phys. Lett. 39, 295 (1981).
[CrossRef]

Antonetti, A.

G. Mourou, C. V. Stancampiano, A. Antonetti, A. Orszag, Appl. Phys. Lett. 39, 295 (1981).
[CrossRef]

Haselbeck, M.

M. Haselbeck, H. S. Kwok, J. Appl. Phys. 54, 3626 (1983).
[CrossRef]

Hasselbeck, M.

M. Hasselbeck, H‥ S. Kwok, Appl. Phys. Lett. 41, 1138 (1982).
[CrossRef]

L. Huang, M. Hasselbeck, S. C. Hsu, H. S. Kwok, to be published in Rev. Sci. Instrum.

Hsu, S. C.

L. Huang, M. Hasselbeck, S. C. Hsu, H. S. Kwok, to be published in Rev. Sci. Instrum.

Huang, L.

L. Huang, M. Hasselbeck, S. C. Hsu, H. S. Kwok, to be published in Rev. Sci. Instrum.

Kwok, H. S.

M. Haselbeck, H. S. Kwok, J. Appl. Phys. 54, 3626 (1983).
[CrossRef]

L. Huang, M. Hasselbeck, S. C. Hsu, H. S. Kwok, to be published in Rev. Sci. Instrum.

Kwok, H? S.

M. Hasselbeck, H‥ S. Kwok, Appl. Phys. Lett. 41, 1138 (1982).
[CrossRef]

Mourou, G.

G. Mourou, C. V. Stancampiano, A. Antonetti, A. Orszag, Appl. Phys. Lett. 39, 295 (1981).
[CrossRef]

Orszag, A.

G. Mourou, C. V. Stancampiano, A. Antonetti, A. Orszag, Appl. Phys. Lett. 39, 295 (1981).
[CrossRef]

Stancampiano, C. V.

G. Mourou, C. V. Stancampiano, A. Antonetti, A. Orszag, Appl. Phys. Lett. 39, 295 (1981).
[CrossRef]

Sze, S. M.

S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).

Appl. Phys. Lett. (2)

M. Hasselbeck, H‥ S. Kwok, Appl. Phys. Lett. 41, 1138 (1982).
[CrossRef]

G. Mourou, C. V. Stancampiano, A. Antonetti, A. Orszag, Appl. Phys. Lett. 39, 295 (1981).
[CrossRef]

J. Appl. Phys. (1)

M. Haselbeck, H. S. Kwok, J. Appl. Phys. 54, 3626 (1983).
[CrossRef]

Other (2)

S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).

L. Huang, M. Hasselbeck, S. C. Hsu, H. S. Kwok, to be published in Rev. Sci. Instrum.

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Figures (2)

Fig. 1
Fig. 1

Upper traces: CO2 laser pulse; lower traces: electrical responses of the photodiodes to 5 MW/cm2 of CO2 laser intensity, (a) SDC diode; (b) Radio Shack diode; (c) SDC diode with double-mode laser pulse input. Horizontal scale: 50 nsec/div.

Fig. 2
Fig. 2

Photodiode signal as a function of laser intensity. Vertical scale is arbitrary as it depends on the bias voltage and type of diode. Typical voltages are in the 1-V range. Note also that the laser intensities employed in this measurement are below the melting conditions.

Equations (1)

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σ FCA = 1.6 × 10 20 T L λ 2 ( cm 2 ) ,

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