Abstract

The range of linear operation of Si photodiodes is defined relating the two limits of the range to the required precision of the measurement. The two limits are given by the noise equivalent power (NEP) and the maximum permissible deviation in the transition region from linear operation to saturation. Data on the linearity ranges of commercially available photodiodes are given.

© 1983 Optical Society of America

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References

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  1. J. Elster, H. Geitel, Wied. Ann. 48, 625 (1893).
    [CrossRef]
  2. C. L. Sanders, J. Res. Natl. Bur. Stand. Sec. A 76, 437 (1972).
    [CrossRef]
  3. CIE Publication No. 53, Methods of Characterizing the Performance of Radiometers and Photometers (CIE Bureau Central, 52 Blvd. Malesherbes 75008 Paris, France, 1982).
  4. W. Budde, Appl. Opt. 18, 1555 (1979).
    [CrossRef] [PubMed]
  5. EG&G Electro-Optics Application Note D3011C-5 (EG&G Electro-Optics 35 Congress St., Salem, Mass. 01970, 1981).
  6. W. Budde, Appl. Opt. 21, 3699 (1982).
    [CrossRef] [PubMed]

1982

1979

1972

C. L. Sanders, J. Res. Natl. Bur. Stand. Sec. A 76, 437 (1972).
[CrossRef]

1893

J. Elster, H. Geitel, Wied. Ann. 48, 625 (1893).
[CrossRef]

Budde, W.

Elster, J.

J. Elster, H. Geitel, Wied. Ann. 48, 625 (1893).
[CrossRef]

Geitel, H.

J. Elster, H. Geitel, Wied. Ann. 48, 625 (1893).
[CrossRef]

Sanders, C. L.

C. L. Sanders, J. Res. Natl. Bur. Stand. Sec. A 76, 437 (1972).
[CrossRef]

Appl. Opt.

J. Res. Natl. Bur. Stand. Sec. A

C. L. Sanders, J. Res. Natl. Bur. Stand. Sec. A 76, 437 (1972).
[CrossRef]

Wied. Ann.

J. Elster, H. Geitel, Wied. Ann. 48, 625 (1893).
[CrossRef]

Other

CIE Publication No. 53, Methods of Characterizing the Performance of Radiometers and Photometers (CIE Bureau Central, 52 Blvd. Malesherbes 75008 Paris, France, 1982).

EG&G Electro-Optics Application Note D3011C-5 (EG&G Electro-Optics 35 Congress St., Salem, Mass. 01970, 1981).

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Figures (5)

Fig. 1
Fig. 1

Dynamic characteristic of a Si photodiode having a saturation current of 3 mA. The maximum linear current Imax = 0.214 mA for a precision of 1% is explained in the text. Both axes have logarithmic scales.

Fig. 2
Fig. 2

Detail of the dynamic characteristic for the explanation of the saturation current I s , the linearly extrapolated photocurrent I l , and the actual nonlinear photocurrent I n , the latter two for equal input.

Fig. 3
Fig. 3

Explanation of supraresponsivity.

Fig. 4
Fig. 4

Typical dynamic characteristic of a commercial photodiode showing the effect of the load resistance R L on the saturation current.

Fig. 5
Fig. 5

Deviation from linearity as a function of photocurrent (log scale) of a Si photodiode.

Tables (2)

Tables Icon

Table I Maximum Linear Photocurrent Imax of a Type of Si Photodiode as a Function of Area (Uncertainty of the Measurement, 10 %)

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Table II Size of Active Area and Linearity Range of Commercially Available Si and GaAsP Photodiodes for 1 % Precision of Radiation Measurement

Equations (12)

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R = log ( I max / I min ) ,
I = S · Φ { 1 - exp [ - I s / ( S · Φ ) ] } ,
D = I l - I n I l = 1 - K .
D = exp [ - I s / ( S · Φ ) ] .
Φ ( D ) = - I s / ( S · ln D ) ,
I n = I s ( 1 - D ) / ln ( 1 / D ) .
I max ( D 2 ) = I max ( D 1 ) · ( 1 - D 2 ) · ln D 1 ( 1 - D 1 ) · ln D 2 .
I max = [ 25 × 10 - 3 / ( R S + R L ) ] · ln [ D · R S H / ( R S + R L ) ] ,
P = Δ I / I .
Δ I = S · NEP .
Δ I I min = P ,
I min = S · NEP / P .

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