Elimination of interface recombination in oxide passivated silicon p⁺n photodiodes by storage of negative charge on the oxide surface

Increase (Decrease) in Current Collected from the Cathode (Anode) by the Current-to-Voltage Converting Circuit of Fig. 6 due to Corona Discharge with and without a Grounded Shield in Place to Prevent Direct Current Flow from the Corona to the Rear Electrode

Response of a Photodiode to ~50 nW of 350-nm Wavelength Radiation after Alternate Exposures to Negative and Positive Corona Discharge

a The response is presented relative to the response of a reference photodiode that is assumed to be stable.
b 0, uncharged; 1, charged (−) well beyond response saturation; 2, discharged (+) to nominal uncharged state; 3, charged (−) as little beyond apparent saturation as possible.
c Response of the photodiode spontaneously decreased over a 1-min period after termination of corona discharge.

Table I

Increase (Decrease) in Current Collected from the Cathode (Anode) by the Current-to-Voltage Converting Circuit of Fig. 6 due to Corona Discharge with and without a Grounded Shield in Place to Prevent Direct Current Flow from the Corona to the Rear Electrode

Table II

Response of a Photodiode to ~50 nW of 350-nm Wavelength Radiation after Alternate Exposures to Negative and Positive Corona Discharge

a The response is presented relative to the response of a reference photodiode that is assumed to be stable.
b 0, uncharged; 1, charged (−) well beyond response saturation; 2, discharged (+) to nominal uncharged state; 3, charged (−) as little beyond apparent saturation as possible.
c Response of the photodiode spontaneously decreased over a 1-min period after termination of corona discharge.