Abstract

A multiangle single-wavelength ellipsometric method has been applied to the evaluation of anisotropy and stress in SiO₂ films grown on silicon substrate. The method is nondestructive, and it does not require a priori knowledge of the dielectric functions of the oxide layer. A novel theoretical anisotropic multiple-layer program is used to calculate the Fresnel reflection coefficients at various angles of incidence; and an iterative least-squares algorithm compares the theoretical calculations to the experimental data. The data-fitting process yields the index, the thickness, and the anisotropy of the oxide layer and also the index and thickness of the SiO_x transition layer.

© 1982 Optical Society of America

Multiple angle ellipsometric analysis of surface layers and surface layer contaminants

M. E. Pedinoff and O. M. Stafsudd
Appl. Opt. 21(3) 518-521 (1982)

Strain induced anisotropy in As₂S₃, As₂Se₃, and ZnSe films on KCl substrates via 10.6-μm and 0.6328-μm ellipsometer measurements and 0.6328-μm reflector measurements

M. E. Pedinoff, M. Braunstein, and O. M. Stafsudd
Appl. Opt. 18(2) 201-211 (1979)

Liquid-phase epitaxial growth of bismuth silicon oxide single-crystal film: a new optically activated optical switch

Kohji Tada, Yoshiki Kuhara, Masami Tatsumi, and Takeshi Yamaguchi
Appl. Opt. 21(16) 2953-2959 (1982)

Principal angle spectroscopic ellipsometry utilizing a rotating analyzer

D. Chandler-Horowitz and G. A. Candela
Appl. Opt. 21(16) 2972-2977 (1982)

Precision in the ellipsometric determination of the optical constants of very thin films

G. Vuye and T. López-Ríos
Appl. Opt. 21(16) 2968-2971 (1982)