Abstract

Mouchart’s theory of the buffer layer is reformulated in terms of internal antireflection and extended to general dielectric/metallic media. The all-dielectric case is then studied in oblique incidence as a means of depolarizing partial reflectors. Several procedures are indicated for the construction of buffering stacks which, when coupled with germinal stacks, balance out their p and s reflections at the given level. Examples of depolarized half-mirrors are presented. A novel version of the Argand diagram for thin films in oblique incidence is introduced during the analysis.

© 1981 Optical Society of America

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  1. J. Mouchart, Appl. Opt. 17, 72 (1978).
    [CrossRef] [PubMed]
  2. This material was first presented in the 1979 Seminar on Thin Films, organized by H. Kaiser at the Paedagogische Hochschule in Potsdam, German Democratic Republic.

1978 (1)

Kaiser, H.

This material was first presented in the 1979 Seminar on Thin Films, organized by H. Kaiser at the Paedagogische Hochschule in Potsdam, German Democratic Republic.

Mouchart, J.

Appl. Opt. (1)

Other (1)

This material was first presented in the 1979 Seminar on Thin Films, organized by H. Kaiser at the Paedagogische Hochschule in Potsdam, German Democratic Republic.

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Figures (10)

Fig. 1
Fig. 1

General scheme for the definition of the buffer layer.

Fig. 2
Fig. 2

Depolarizing a germinal stack A to Rp = Rs = 50%. Initial values for A: Rp = 50%, Rs = 81%. Requested amplitude reflectances for buffering stack B: nBp = 0, rBs = 53%. Medium L becomes the buffer layer after B is added. A split-filter technique is indicated for B.

Fig. 3
Fig. 3

Argand diagrams of a four-layer stack with the inner rp vectors scaled up to equal the rs vectors: (a) outer vectors different, (b) all vectors unified, (c) only last vectors different and in opposition.

Fig. 4
Fig. 4

Construction of an energetically effective opposition. Diameter 4 4 ¯ = 0.4635 , 01 ¯ = 12 ¯ = 23 ¯ = 0.3082 , 3 4 ¯ = 0.2615.

Fig. 5
Fig. 5

Consequences of opposition in the Argand diagram. ρB VS φs curves for both polarizations display a halfwave shift.

Fig. 6
Fig. 6

Spectral reflectance curves Rp, Rs for a semireflector depolarized by opposition, taking a hypothetical backing medium of 0.8 refractive index. Tuning: air / 70 H 90 L 90 H - 34 L - 57 H 54 L 36 H - 101 L - 59 h 49.5 L 30 H / 0.8 (some slight rounding off in stack II contrary to main text). Design wavelength is 600 nm.

Fig. 7
Fig. 7

Useful value ρBs = 18% in a steep cuton edge of the s case accompanies ρBp = 0. Tuning: H / 85 L 65 H 55 L - φ s - 65 L 75 H 95 L / glass.

Fig. 8
Fig. 8

ρB vs φSs curves for three-layer buffering stacks of analogous design: (a) L / 60 L 90 L 60 H - φ s - 60 H 90 L 60 H / glass, (b) L / 120 H 90 L 120 H - φ s - 120 H 90 L 120 H / glass. (Odd layers are dimensioned symmetrically about 90°.)

Fig. 9
Fig. 9

Spectral reflectance curves for germinal stack air / 70 H 90 L 90 H / L , depolarized by: (a) buffering system [Eq. (10a)] with coupling layer phase thickness 91°; (b) and (c) buffering system [Eq. (10b)] with coupling layer thicknesses 69.6 and 85.6°, respectively. Designs centered at λ = 600 nm.

Fig. 10
Fig. 10

Semireflector with the standard germinal stack for Rp = 50%, depolarized by a buffering stack of the high-pass filter type. Tuning: air / 70 H 90 L 90 H - 109.5 L - 34.35 H [ 68.7 ° L H ] 4 68.7 L 34.35 H / G. Design wavelength 600 nm.

Tables (1)

Tables Icon

Table I Left Half of Buffering Stack Based on Five-Layer Symmetrical Periods.

Equations (19)

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n ν 2 n B 2 = γ δ β α ,
n G 2 = γ α β δ ,
n B 2 = γ δ - κ δ 2 β α + κ β 2 ,
η 2 + ( κ - β γ - α β 2 β δ ) 2 = ( 1 2 β δ ) 2 .
α - η n B δ + β κ = 0 ,
β η - γ n B + δ κ n B = 0 ,
η n B = α δ ,
n B η = γ β .
R min = r A - r B 1 - r A r B ,
2 φ = odd x π + 2 A R - δ A R + δ B R ,
2 φ = even x π + δ A L + δ B R ,
r B = r A - R min 1 - r A R min .
maximum : 2 φ s = odd x π + δ I L + δ I R ,
minimum : 2 φ s = even x π + δ I L + δ II R .
( δ I L S - δ I L p ) + ( δ II R S - δ II R p ) = odd x π .
H / 85 L 65 H 55 L - H S - 65 L 75 H 95 L / G
L / c 1 H c 2 L H c 2 L c 1 H - L S - c 1 H c 2 L H c 2 L c 1 H / G ,
L / 30 H 90 L 56 H 90 L 30 H - 139.5 L - 28 H 90 L 56 H 90 L 28 H / G ,
L / 35 H 90 L 56 H 90 L 35 H - 127.3 H - 33 H 90 L 56 H 90 L 33 H / G ,

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