This paper is a theoretical evaluation of double heterostructure AlGaAs laser epilayer structures designed to optimize performance in integrated optical circuits. The thickness and AlAs concentration are varied to maximize coupling efficiency between the active laser region and the passive waveguide region of the integrated optical circuit. This maximization is performed consistent with maintaining a low laser threshold and ease of fabrication. Both an asymmetric large optical cavity and a symmetric large optical cavity with an internal epitaxially grown tapered active layer are considered. It is shown that with suitable design, both efficient coupling and low threshold can be achieved.
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