Abstract

Chemical–mechanical polishing experiments produced optical-quality low-scatter surfaces on single-crystal silicon. An alkaline silica hydrosol slurry and preconditioned pitch laps generated high-quality optically flat surfaces after several hours of polishing. The best results produced a λ/34 peak-to-peak surface having a 6-Å rms surface roughness using bowl-feed polishing and a persuader plate.

© 1980 Optical Society of America

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References

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  1. G. P. Garmire, Space Optics Imaging X-Ray Optics (SPIE, Bellingham, Washington, 1979), Vol. 184, pp. 20–22.
    [Crossref]
  2. R. M. Elwell, J. M. Kruse, L. Michelove, “Method of Producing Low-Scatter Surfaces on Metal Substrates,” U.S. Patent3,738,858, June1973.
  3. W. P. Barnes, in Design, Manufacture & Application of Metal Optics (SPIE, Bellingham, Washington, 1975), Vol. 65, pp. 3–7.
    [Crossref]
  4. W. P. Barnes, R. R. McDonough, Opt. Eng. 18, 43 (1979).
    [Crossref]
  5. J. R. Kurdock, J. Buckmelter, T. T. Saito, R. R. Austin, Appl. Opt. 14, 1808 (1975).
    [Crossref] [PubMed]
  6. T. T. Saito, J. R. Kurdock, Appl. Opt. 15, 27 (1976).
    [Crossref] [PubMed]
  7. R. B. Herring, Solid State Technol. 19, 37 (1976).
    [Crossref]
  8. E. Mendel, Solid State Technol. 10, 27 (1967).
  9. T. M. Buck, R. Meek, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 419–430.
  10. A. Mayer, D. A. Puotinen, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 431–435.
  11. R. J. Walsh, A. H. Herzog, “Process for Polishing Semiconductor Materials,” U.S. Patent3,170, 273 (1963).
  12. R. J. Walsh, Monsanto Industrial Chemical Co.; private communication.
  13. W. Kern, RCA Rev. 39, 278 (1978).
  14. B. Tredinnick, Alliance Chemical Co., private communication.
  15. A. Franks, Mater. Sci. Eng. 19, 169 (1975).
    [Crossref]
  16. L. H. Blake, E. Mendel, Solid State Technol. 13, 42 (1970).
  17. E. Mendel, K. Yang, Proc. IEEE, 57, 1476 (1969).
    [Crossref]
  18. R. B. Mcintosh, “Silicon Polishing and Grating Program,” Final Report—Phase I, Contract N60530-78-C-0102, Naval Weapons Center, China Lake, California (1979).
  19. R. W. Dietz, J. M. Bennett, Appl. Opt. 5, 881 (1966).
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  20. H. E. Bennett, Opt. Eng. 17, 480 (1978).
    [Crossref]

1979 (1)

W. P. Barnes, R. R. McDonough, Opt. Eng. 18, 43 (1979).
[Crossref]

1978 (2)

H. E. Bennett, Opt. Eng. 17, 480 (1978).
[Crossref]

W. Kern, RCA Rev. 39, 278 (1978).

1976 (2)

1975 (2)

1970 (3)

L. H. Blake, E. Mendel, Solid State Technol. 13, 42 (1970).

T. M. Buck, R. Meek, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 419–430.

A. Mayer, D. A. Puotinen, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 431–435.

1969 (1)

E. Mendel, K. Yang, Proc. IEEE, 57, 1476 (1969).
[Crossref]

1967 (1)

E. Mendel, Solid State Technol. 10, 27 (1967).

1966 (1)

Austin, R. R.

Barnes, W. P.

W. P. Barnes, R. R. McDonough, Opt. Eng. 18, 43 (1979).
[Crossref]

W. P. Barnes, in Design, Manufacture & Application of Metal Optics (SPIE, Bellingham, Washington, 1975), Vol. 65, pp. 3–7.
[Crossref]

Bennett, H. E.

H. E. Bennett, Opt. Eng. 17, 480 (1978).
[Crossref]

Bennett, J. M.

Blake, L. H.

L. H. Blake, E. Mendel, Solid State Technol. 13, 42 (1970).

Buck, T. M.

T. M. Buck, R. Meek, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 419–430.

Buckmelter, J.

Dietz, R. W.

Elwell, R. M.

R. M. Elwell, J. M. Kruse, L. Michelove, “Method of Producing Low-Scatter Surfaces on Metal Substrates,” U.S. Patent3,738,858, June1973.

Franks, A.

A. Franks, Mater. Sci. Eng. 19, 169 (1975).
[Crossref]

Garmire, G. P.

G. P. Garmire, Space Optics Imaging X-Ray Optics (SPIE, Bellingham, Washington, 1979), Vol. 184, pp. 20–22.
[Crossref]

Herring, R. B.

R. B. Herring, Solid State Technol. 19, 37 (1976).
[Crossref]

Herzog, A. H.

R. J. Walsh, A. H. Herzog, “Process for Polishing Semiconductor Materials,” U.S. Patent3,170, 273 (1963).

Kern, W.

W. Kern, RCA Rev. 39, 278 (1978).

Kruse, J. M.

R. M. Elwell, J. M. Kruse, L. Michelove, “Method of Producing Low-Scatter Surfaces on Metal Substrates,” U.S. Patent3,738,858, June1973.

Kurdock, J. R.

Mayer, A.

A. Mayer, D. A. Puotinen, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 431–435.

McDonough, R. R.

W. P. Barnes, R. R. McDonough, Opt. Eng. 18, 43 (1979).
[Crossref]

Mcintosh, R. B.

R. B. Mcintosh, “Silicon Polishing and Grating Program,” Final Report—Phase I, Contract N60530-78-C-0102, Naval Weapons Center, China Lake, California (1979).

Meek, R.

T. M. Buck, R. Meek, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 419–430.

Mendel, E.

L. H. Blake, E. Mendel, Solid State Technol. 13, 42 (1970).

E. Mendel, K. Yang, Proc. IEEE, 57, 1476 (1969).
[Crossref]

E. Mendel, Solid State Technol. 10, 27 (1967).

Michelove, L.

R. M. Elwell, J. M. Kruse, L. Michelove, “Method of Producing Low-Scatter Surfaces on Metal Substrates,” U.S. Patent3,738,858, June1973.

Puotinen, D. A.

A. Mayer, D. A. Puotinen, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 431–435.

Saito, T. T.

Tredinnick, B.

B. Tredinnick, Alliance Chemical Co., private communication.

Walsh, R. J.

R. J. Walsh, A. H. Herzog, “Process for Polishing Semiconductor Materials,” U.S. Patent3,170, 273 (1963).

R. J. Walsh, Monsanto Industrial Chemical Co.; private communication.

Yang, K.

E. Mendel, K. Yang, Proc. IEEE, 57, 1476 (1969).
[Crossref]

Appl. Opt. (3)

Mater. Sci. Eng. (1)

A. Franks, Mater. Sci. Eng. 19, 169 (1975).
[Crossref]

Natl. Bur. Stand. U.S. Spec. Publ. 337 (2)

T. M. Buck, R. Meek, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 419–430.

A. Mayer, D. A. Puotinen, in “Silicon Device Processing,” Natl. Bur. Stand. U.S. Spec. Publ. 337 (1970), pp. 431–435.

Opt. Eng. (2)

W. P. Barnes, R. R. McDonough, Opt. Eng. 18, 43 (1979).
[Crossref]

H. E. Bennett, Opt. Eng. 17, 480 (1978).
[Crossref]

Proc. IEEE (1)

E. Mendel, K. Yang, Proc. IEEE, 57, 1476 (1969).
[Crossref]

RCA Rev. (1)

W. Kern, RCA Rev. 39, 278 (1978).

Solid State Technol. (3)

R. B. Herring, Solid State Technol. 19, 37 (1976).
[Crossref]

E. Mendel, Solid State Technol. 10, 27 (1967).

L. H. Blake, E. Mendel, Solid State Technol. 13, 42 (1970).

Other (7)

R. B. Mcintosh, “Silicon Polishing and Grating Program,” Final Report—Phase I, Contract N60530-78-C-0102, Naval Weapons Center, China Lake, California (1979).

G. P. Garmire, Space Optics Imaging X-Ray Optics (SPIE, Bellingham, Washington, 1979), Vol. 184, pp. 20–22.
[Crossref]

R. M. Elwell, J. M. Kruse, L. Michelove, “Method of Producing Low-Scatter Surfaces on Metal Substrates,” U.S. Patent3,738,858, June1973.

W. P. Barnes, in Design, Manufacture & Application of Metal Optics (SPIE, Bellingham, Washington, 1975), Vol. 65, pp. 3–7.
[Crossref]

B. Tredinnick, Alliance Chemical Co., private communication.

R. J. Walsh, A. H. Herzog, “Process for Polishing Semiconductor Materials,” U.S. Patent3,170, 273 (1963).

R. J. Walsh, Monsanto Industrial Chemical Co.; private communication.

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Figures (1)

Fig. 1
Fig. 1

Bowl-feed polishing with persuader plate.

Tables (1)

Tables Icon

Table I Figure, Total Integrated Scatter, and Surface Roughness For Three Chemical–Mechanical Polished 7.6-cm Diameter Silicon Substrates

Metrics