Abstract

It is often claimed that silicon photodiodes are linear over many decades, but very little evidence on the experimental verification can be found in the literature. Therefore, an effort was made to investigate the linearity of Si photodiodes over as many decades as possible. Optically, the experiments are based on a cascaded use of the linearity tester described by Sanders, which utilizes the double-aperture method. The electronics include an operational amplifier, a voltage-to-frequency converter, and a counter. Details of the optical and electronic instrumentation will be presented. The measurements are extended to cover a range of about 9 decades, from 10 mA to about 10 pA. Measurements were made on Si photodiodes from various manufacturers, and the results are given.

© 1979 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. C. L. Sanders, J. Res. Nat. Bur. Stand. Sect. A: 76, 437 (1972).
  2. C. L. Sanders, Appl. Opt. 1, 207 (1962).
    [CrossRef]
  3. For obvious reasons, the curves will not be identified with any of the photodiodes listed in Table I.
  4. A. R. Schaefer, E. F. Zalewski, M. A. Lind, J. Geist, “Linearity Studies on Silicon Photodiodes,” in Proceedings of the Electro-Optics/Laser 77 Conference and Expositions, Anaheim, California, October 1977, p. 459.

1972 (1)

C. L. Sanders, J. Res. Nat. Bur. Stand. Sect. A: 76, 437 (1972).

1962 (1)

Geist, J.

A. R. Schaefer, E. F. Zalewski, M. A. Lind, J. Geist, “Linearity Studies on Silicon Photodiodes,” in Proceedings of the Electro-Optics/Laser 77 Conference and Expositions, Anaheim, California, October 1977, p. 459.

Lind, M. A.

A. R. Schaefer, E. F. Zalewski, M. A. Lind, J. Geist, “Linearity Studies on Silicon Photodiodes,” in Proceedings of the Electro-Optics/Laser 77 Conference and Expositions, Anaheim, California, October 1977, p. 459.

Sanders, C. L.

C. L. Sanders, J. Res. Nat. Bur. Stand. Sect. A: 76, 437 (1972).

C. L. Sanders, Appl. Opt. 1, 207 (1962).
[CrossRef]

Schaefer, A. R.

A. R. Schaefer, E. F. Zalewski, M. A. Lind, J. Geist, “Linearity Studies on Silicon Photodiodes,” in Proceedings of the Electro-Optics/Laser 77 Conference and Expositions, Anaheim, California, October 1977, p. 459.

Zalewski, E. F.

A. R. Schaefer, E. F. Zalewski, M. A. Lind, J. Geist, “Linearity Studies on Silicon Photodiodes,” in Proceedings of the Electro-Optics/Laser 77 Conference and Expositions, Anaheim, California, October 1977, p. 459.

Appl. Opt. (1)

J. Res. Nat. Bur. Stand. Sect. A (1)

C. L. Sanders, J. Res. Nat. Bur. Stand. Sect. A: 76, 437 (1972).

Other (2)

For obvious reasons, the curves will not be identified with any of the photodiodes listed in Table I.

A. R. Schaefer, E. F. Zalewski, M. A. Lind, J. Geist, “Linearity Studies on Silicon Photodiodes,” in Proceedings of the Electro-Optics/Laser 77 Conference and Expositions, Anaheim, California, October 1977, p. 459.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1

Linearity tester by Sanders (for details see Ref. 2).

Fig. 2
Fig. 2

Schematic diagram of optical arrangement: S = source; L = linearity tester; F = filter; C = precision diaphragm; D = detector with opal-glass diffuser.

Fig. 3
Fig. 3

Schematic diagram of electronic circuitry.

Fig. 4
Fig. 4

Typical curves of linearity behavior of six silicon photodiodes. The scale for the photocurrent is logarithmic.

Tables (1)

Tables Icon

Table I Si Diodesa

Metrics