Abstract

A method for the measurement of the thermal emissivity of films on substrates and for the subsequent determination of the optical constants is described. It is applied to sputtered amorphous silicon films on sapphire substrates. The results, obtained in the 3–6.3-μm spectral range and at 400–800°C, confirm the existence of residual ir absorption in this region with an absorption coefficient on the order of 10².

© 1978 Optical Society of America

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