Abstract

This paper describes a study of the absorptance of thin films with the aim of elucidating the region of validity for a direct relationship between the absorptance and the absorption coefficient. The calculations are performed for an unsupported film, a film on a transparent or metallic substrate, and for the absorptance as a function of polarization.

© 1977 Optical Society of America

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References

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  1. D. Beaglehole, Appl. Opt. 7, 2218 (1968).
  2. T. M. Donovan, in M. H. Brodsky, S. Kirkpatrick, D. Weaire, Eds. Tetrahedially Bonded Amorphous Semiconductors (American Institute of Physics, New York, 1974); T. M. Donovan, M. L. Kotek, J. E. Fischer, in Amorphous and Liquid Semiconductors, J. Stuke, W. Breming, Eds. (Taylor and Francis, London, 1974).
  3. F. Abelès, in Advanced Optical Techniques, A.C.S. Van Heel, Ed. (North-Holland, Amsterdam, 1967).
  4. O. S. Heavens, Optical Properties of Thin Solid Films (Butterworths, London, 1955).
  5. For an unsupported film the electric wave amplitudes as a function of depth relative to the incident electric wave are given by E(x)=(1-r) exp(-iγx){1-r exp[-iγ2(d-x)]1-r2exp(-iγ2d)}. The wave intensity of Fig. 3 is given by E(x)E*(x), while in Fig. 4 this intensity has been averaged over the thickness d.
  6. A. Vasicek, in Optics of Thin Films, G. Hass, Ed. (North-Holland, Amsterdam, 1960).
  7. The irradiance is the power per unit solid angle per unit area perpendicular to the direction of propagation.

1968 (1)

Abelès, F.

F. Abelès, in Advanced Optical Techniques, A.C.S. Van Heel, Ed. (North-Holland, Amsterdam, 1967).

Beaglehole, D.

Donovan, T. M.

T. M. Donovan, in M. H. Brodsky, S. Kirkpatrick, D. Weaire, Eds. Tetrahedially Bonded Amorphous Semiconductors (American Institute of Physics, New York, 1974); T. M. Donovan, M. L. Kotek, J. E. Fischer, in Amorphous and Liquid Semiconductors, J. Stuke, W. Breming, Eds. (Taylor and Francis, London, 1974).

Heavens, O. S.

O. S. Heavens, Optical Properties of Thin Solid Films (Butterworths, London, 1955).

Vasicek, A.

A. Vasicek, in Optics of Thin Films, G. Hass, Ed. (North-Holland, Amsterdam, 1960).

Appl. Opt. (1)

Other (6)

T. M. Donovan, in M. H. Brodsky, S. Kirkpatrick, D. Weaire, Eds. Tetrahedially Bonded Amorphous Semiconductors (American Institute of Physics, New York, 1974); T. M. Donovan, M. L. Kotek, J. E. Fischer, in Amorphous and Liquid Semiconductors, J. Stuke, W. Breming, Eds. (Taylor and Francis, London, 1974).

F. Abelès, in Advanced Optical Techniques, A.C.S. Van Heel, Ed. (North-Holland, Amsterdam, 1967).

O. S. Heavens, Optical Properties of Thin Solid Films (Butterworths, London, 1955).

For an unsupported film the electric wave amplitudes as a function of depth relative to the incident electric wave are given by E(x)=(1-r) exp(-iγx){1-r exp[-iγ2(d-x)]1-r2exp(-iγ2d)}. The wave intensity of Fig. 3 is given by E(x)E*(x), while in Fig. 4 this intensity has been averaged over the thickness d.

A. Vasicek, in Optics of Thin Films, G. Hass, Ed. (North-Holland, Amsterdam, 1960).

The irradiance is the power per unit solid angle per unit area perpendicular to the direction of propagation.

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