Abstract

The properties of the Shipley AZ-1350B positive photoresist used with the Shipley AZ-303A developer were investigated. It was found that the use of AZ-303A developer results in a significant improvement of the sensitivity and the linearity of the photoresist. The unexposed etch rate of the photoresist was 35 Å ± 5 Å/sec. Gratings of high efficiency have been successfully fabricated using the above combination of photoresist and developer.

© 1977 Optical Society of America

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References

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  1. H. L. Garvin, E. Garmire, S. Somekh, H. Stoll, A. Yariv, Appl. Opt. 12, 455 (1973).
    [Crossref] [PubMed]
  2. S. Austin, F. T. Stone, Appl. Opt. 15, 1071 (1976).
    [Crossref] [PubMed]
  3. S. Austin, F. T. Stone, Appl. Opt. 15, 2126 (1976).
    [Crossref] [PubMed]
  4. R. A. Bartolini, Appl. Opt. 11, 1275 (1972).
    [Crossref] [PubMed]
  5. R. A. Bartolini, Appl. Opt. 13, 129 (1974).
    [Crossref] [PubMed]
  6. M. S. Htoo, Photogr. Sci. Eng. 12, 169 (1968).
  7. F. J. Loprest, E. A. Fitzgerald, Photogr. Sci. Eng. 15, 260 (1971).
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    [Crossref] [PubMed]
  9. A. C. Livanos, A. Katzir, A. Yariv, Opt. Commun. 20, 179 (1977).
    [Crossref]

1977 (1)

A. C. Livanos, A. Katzir, A. Yariv, Opt. Commun. 20, 179 (1977).
[Crossref]

1976 (2)

1975 (1)

1974 (1)

1973 (1)

1972 (1)

1971 (1)

F. J. Loprest, E. A. Fitzgerald, Photogr. Sci. Eng. 15, 260 (1971).

1968 (1)

M. S. Htoo, Photogr. Sci. Eng. 12, 169 (1968).

Austin, S.

Bartolini, R. A.

Fitzgerald, E. A.

F. J. Loprest, E. A. Fitzgerald, Photogr. Sci. Eng. 15, 260 (1971).

Garmire, E.

Garvin, H. L.

Htoo, M. S.

M. S. Htoo, Photogr. Sci. Eng. 12, 169 (1968).

Katzir, A.

A. C. Livanos, A. Katzir, A. Yariv, Opt. Commun. 20, 179 (1977).
[Crossref]

Livanos, A. C.

A. C. Livanos, A. Katzir, A. Yariv, Opt. Commun. 20, 179 (1977).
[Crossref]

Loprest, F. J.

F. J. Loprest, E. A. Fitzgerald, Photogr. Sci. Eng. 15, 260 (1971).

Norman, S. L.

Singh, M. P.

Somekh, S.

Stoll, H.

Stone, F. T.

Yariv, A.

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Figures (4)

Fig. 1
Fig. 1

Etch depths in μm of unexposed AZ-1350B photoresist as a function of development time in seconds for various dilutions ratios of AZ-303A developer. The slope of the curves determines r2, which for the 6:1 dilution is 35 Å ± 5 Å.

Fig. 2
Fig. 2

Etch depth in μm of unexposed AZ-1350B photoresist as a function of development time in minutes for MF-312 developer. The 1:1 dilution results in r2 = 5 Å ± 1 Å.

Fig. 3
Fig. 3

Thickness change Δd in μm of AZ-1350B photoresist as a function of exposure E in mW/cm2. The circles represent the AZ-303A developer, and the squares represent the MF-312 developer.

Fig. 4
Fig. 4

Grating efficiency (absolute) as a function of exposure E in mW/cm2 for 10-sec and 20-sec development times in AZ-303A developer. Initial resist thickness was 0.31 μm.

Tables (1)

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Table I Unexposed Etch Rate for AZ Photo resists and AZ-303A Developer

Equations (2)

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Δ d = T [ r 1 - Δ r exp ( - c E ) ] ,
Δ d Δ r T c E + r 2 T .

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