Abstract

Propagation characteristics of GaAs/GaAs_1−xP_x and GaAs_1−yP_y/GaAs_1−xP_x waveguides are evaluated at 1.06-μm and 0.905-μm wavelengths. Attenuation of the lowest order mode in single-mode and two-mode waveguides is 1.2 dB/cm at 1.06 μm. At 0.905 μm the measured attenuation rate for the GaAs_0.80P_0.20/GaAs_0.65P_0.35 waveguide is 1.5 dB/cm. Multimode waveguides have considerable mode conversion due to surface undulations caused by grading dislocations. Refractive indices have also been calculated from experimental data at 1.06 μm for GaAs and GaAs_0.65P_0.35 to be 3.47 and 3.325, respectively.

© 1976 Optical Society of America

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