Abstract

Ion implanted p-n junction photodiodes in epitaxially grown (GaxIn1-x) As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of 0 < x < 1. High values for quantum efficiency were obtained for the devices with a high value of x. Peak Dλ,f* of greater than 1011 [cm(Hz)1/2/W] at room temperature was obtained at 0.8-μm wavelength, while a peak Dλ,f* of 5 × 1010 [cm(Hz)1/2/W] was obtained at 165 K at 1.4-μm wavelength.

© 1975 Optical Society of America

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