Abstract

The impulse rise and fall times of biplanar vacuum photodiodes are experimentally investigated by the use of a single ultrashort laser pulse from a train of mode-locked pulses. It was confirmed that the impulse rise time is a function of the photoelectrons’ transit time from photocathode to anode, and that the impulse fall time is 2.2 times the capacitance of the photodiode and the resistive component of the load.

© 1973 Optical Society of America

Limitations of the Use of Vacuum Photodiodes in Instruments for the Measurement of Laser Power and Energy

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Luminescent Rise Times of Inorganic Phosphors Excited by High Intensity Ultraviolet Light

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X-ray absolute calibration of the time response of a silicon photodiode

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