Abstract

A photoelectrochemical process has been developed that is capable of producing surface relief holograms on semiconductor crystals. The exposure characteristics of this recording process have been measured, and an analysis of their effect on the reconstructed image is presented. The photoanodic engraving (PAE) process applied to silicon wafers has produced holographic storage densities exceeding 10⁵ bits/cm² for data mask type objects. These surface relief holograms have an archival permanence unequaled by any other holographic recording medium. Replication of the surface relief holograms on clear vinyl plastic has been achieved with storage densities of approximately 5 × 10³ bits/cm².

© 1972 Optical Society of America

Advanced Optical Storage Techniques for Computers

R. L. Aagard, T. C. Lee, and D. Chen
Appl. Opt. 11(10) 2133-2139 (1972)

Phase Holograms in Photochromic Materials

W. J. Tomlinson
Appl. Opt. 11(4) 823-831 (1972)

Photoanodic Engraving as a Means of Making a Relief Hologram on Photoconductor Surfaces

David T. Y. Wei and Louis R. Bloom
Appl. Opt. 12(1) 150-152 (1973)

Remote Real-Time Reconstruction of Holograms Using the Lumatron

R. J. Doyle and W. E. Glenn
Appl. Opt. 11(5) 1261-1264 (1972)

Random Phase Shifters for Fourier Transformed Holograms

Y. Takeda, Y. Oshida, and Y. Miyamura
Appl. Opt. 11(4) 818-822 (1972)