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References

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  1. J. R. Sizelove, J. Love, Appl. Opt. 6, 1777(1967).
    [CrossRef] [PubMed]
  2. W. E. Spicer, F. Wooten, Proc. IEEE 51, 1119 (1963).
    [CrossRef]
  3. S. M. Ryvkin, Photoelectric Effects in Semiconductors (Consultants Bureau, New York, 1964).
  4. R. A. Smith, Semiconductors (Cambridge University Press, New York, 1959).
  5. M. Neuberger, “Silicon Data Sheets,” Electronic Properties Information Center, Hughes Aircraft Company, April1965.
  6. P. H. Wendland, “Multiple Reflective Laser Detector Diode,” Contract AF 33(615)–3591, Interim Engineering Report No. 4.
  7. J. N. Shive, Semiconductor Devices (D. Van Nostrand Co., Inc., Princeton, 1959).

1967 (1)

1963 (1)

W. E. Spicer, F. Wooten, Proc. IEEE 51, 1119 (1963).
[CrossRef]

Love, J.

Neuberger, M.

M. Neuberger, “Silicon Data Sheets,” Electronic Properties Information Center, Hughes Aircraft Company, April1965.

Ryvkin, S. M.

S. M. Ryvkin, Photoelectric Effects in Semiconductors (Consultants Bureau, New York, 1964).

Shive, J. N.

J. N. Shive, Semiconductor Devices (D. Van Nostrand Co., Inc., Princeton, 1959).

Sizelove, J. R.

Smith, R. A.

R. A. Smith, Semiconductors (Cambridge University Press, New York, 1959).

Spicer, W. E.

W. E. Spicer, F. Wooten, Proc. IEEE 51, 1119 (1963).
[CrossRef]

Wendland, P. H.

P. H. Wendland, “Multiple Reflective Laser Detector Diode,” Contract AF 33(615)–3591, Interim Engineering Report No. 4.

Wooten, F.

W. E. Spicer, F. Wooten, Proc. IEEE 51, 1119 (1963).
[CrossRef]

Appl. Opt. (1)

Proc. IEEE (1)

W. E. Spicer, F. Wooten, Proc. IEEE 51, 1119 (1963).
[CrossRef]

Other (5)

S. M. Ryvkin, Photoelectric Effects in Semiconductors (Consultants Bureau, New York, 1964).

R. A. Smith, Semiconductors (Cambridge University Press, New York, 1959).

M. Neuberger, “Silicon Data Sheets,” Electronic Properties Information Center, Hughes Aircraft Company, April1965.

P. H. Wendland, “Multiple Reflective Laser Detector Diode,” Contract AF 33(615)–3591, Interim Engineering Report No. 4.

J. N. Shive, Semiconductor Devices (D. Van Nostrand Co., Inc., Princeton, 1959).

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Figures (3)

Fig. 1
Fig. 1

Device configuration.

Fig. 2
Fig. 2

Effect of reverse voltage on spectral response.

Fig. 3
Fig. 3

Shift of the spectral maximum.

Equations (5)

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Y = 0 T α ( I / I 0 ) exp [ - ( T - x ) / l ] d x ,
Y = exp ( - Δ T / l 2 ) 0 T - Δ T α ( I / I 0 ) exp [ - ( T - Δ T - x ) / l 1 ] d x + T - Δ T T α ( I / I 0 ) exp [ - ( T - x ) / l 2 ] d x ,
l = 2 l D 2 / [ ( l E 2 + 4 l D 2 ) 1 2 - l E ] ,
Y / D = e - τ 2 ( ( P 1 / P 1 - 1 ) ( e - τ 1 - e - P 1 τ 1 ) + R exp [ - α ( T + Δ T ) ] ( P 1 / P 1 + 1 ) { 1 - exp [ - ( P 1 + 1 ) τ 1 ] } ) + e - P 1 τ 1 ( ( P 2 / P 2 - 1 ) ( e - τ 2 - e - P 2 τ 2 ) + R e - P 2 τ 2 ( P 2 / P 2 + 1 ) { 1 - exp [ - ( P 2 + 1 ) τ 2 ] } ) ,
D = 1 - R R 0 e - 2 α T , P i = α l i , τ 1 = ( T - Δ T ) / l 1 , τ 2 = Δ T / l 2 .

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