High-performance inverted evanescently coupled waveguide integrated MUTC-PD with high response speed

Fangli Wang; Bojian Zhang; Liang Wang

doi:10.1364/AO.437921

Applied Optics
Vol. 60,
Issue 34,
pp. 10696-10703
(2021)
•https://doi.org/10.1364/AO.437921

High-performance inverted evanescently coupled waveguide integrated MUTC-PD with high response speed

Fangli Wang, Bojian Zhang, and Liang Wang

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Fangli Wang, Bojian Zhang, and Liang Wang, "High-performance inverted evanescently coupled waveguide integrated MUTC-PD with high response speed," Appl. Opt. 60, 10696-10703 (2021)

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Table of Contents Category
- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: July 20, 2021
- Revised Manuscript: November 3, 2021
- Manuscript Accepted: November 9, 2021
- Published: November 29, 2021

Abstract

Here we propose an inverted evanescently-coupled waveguide modified uni-traveling-carrier photodiode (IECWG MUTC-PD) and verify the character numerically. In this photodiode, the epitaxial structure is inverted from p-i-n to n-i-p, and a diluted waveguide is applied. The material of capacitance control layer is optimized to realize energy band compensation and capacitance control. Such structure possesses a large electric field in the whole depletion region and has a uniform light absorption, which improves the space charge effect. As a result, the PD achieves a 3-dB bandwidth of 71.9 GHz with a ${35}\;\unicode {x00B5} {{\rm m}^2}$ active area at $-{5}\;{\rm V}$ bias voltage and an internal responsivity of 0.59 A/W in 7-µm long short PD with a 200-nm-thick absorption layer.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Reference	PD Area (µm²)	3 dB (GHz)	Responsivity (A/W)
[22]	$2 \times 25$	108	0.53
[23]	$3 \times 20$	110	0.5
[24]	–	130	0.45
[25]	$10 \times 21$	48	0.64 (internal responsivity)
[26]	70	70	0.15
[27]	$4 \times 15$	75	0.5
[28]	24	105	0.1
[29]	$4 \times 15$	100	0.2
[30]	$4 \times 15$	30	0.137
[31]	$5 \times 7$	85	0.26
[32]	–	60	0.46
[33]	$5 \times 7$	56	0.170.48 (internal responsivity)

Layer	Material	Thickness (nm)	Bandgap (eV)	Doping
P contact	InGaAs	50	0.75	P $2.0 \times 10^{19}$
Block	InP	300	1.35	P $1.8 \times 10^{18}$
Grading	InGaAsP, Q1.1	15	1.13	P $2.0 \times 10^{18}$
Grading	InGaAsP, Q1.4	15	0.89	P $2.0 \times 10^{18}$
Absorber	InGaAs	40	0.75	P $2.0 \times 10^{18}$
Absorber	InGaAs	30	0.75	P $1.0 \times 10^{18}$
Absorber	InGaAs	30	0.75	P $4.0 \times 10^{17}$
Absorber	InGaAs	100	0.75	N $1.0 \times 10^{16}$
Cliff & WG	InGaAsP, Q1.53	50	0.81	N $3.0 \times 10^{17}$
Drift & WG	InGaAsP, Q1.46	200	0.85	N $1.0 \times 10^{16}$
Grading & WG	InGaAsP, Q1.29	15	0.96	N $1.0 \times 10^{16}$
Grading & WG	InGaAsP, Q1.1	15	1.13	N $1.0 \times 10^{16}$
N contact	InP	850	1.35	N $1.0 \times 10^{19}$

Layer	Material	Thickness (nm)	Bandgap (eV)	Doping
N contact	InGaAs	200	0.75	N $1.0 \times 10^{19}$
Drift	InGaAsP, Q1.53	250	0.81	N $1.0 \times 10^{16}$
Cliff	InGaAsP, Q1.53	30	0.81	N $3.0 \times 10^{17}$
Absorber	InGaAs	130	0.75	N $1.0 \times 10^{16}$
Absorber	InGaAs	30	0.75	P $4.0 \times 10^{17}$
Absorber	InGaAs	20	0.75	P $1.0 \times 10^{18}$
Absorber	InGaAs	20	0.75	P $2.0 \times 10^{18}$
Block	InGaAsP, Q1.4	200	0.89	P $2.0 \times 10^{18}$
OM1	InGaAsP, Q1.3	150	0.95	Undoped
OM2	InGaAsP, Q1.1	190	1.13	Undoped
Diluted waveguide	5 periods of InP/InGaAsP, Q1.2	110/180	1.35/1.03	Undoped
Buffer	InP	50	1.35	Undoped
Substrate	InP	300,000	1.35	Undoped

Reference	PD Area (µm²)	3 dB (GHz)	Responsivity (A/W)
[22]	$2 \times 25$	108	0.53
[23]	$3 \times 20$	110	0.5
[24]	–	130	0.45
[25]	$10 \times 21$	48	0.64 (internal responsivity)
[26]	70	70	0.15
[27]	$4 \times 15$	75	0.5
[28]	24	105	0.1
[29]	$4 \times 15$	100	0.2
[30]	$4 \times 15$	30	0.137
[31]	$5 \times 7$	85	0.26
[32]	–	60	0.46
[33]	$5 \times 7$	56	0.170.48 (internal responsivity)

Layer	Material	Thickness (nm)	Bandgap (eV)	Doping
P contact	InGaAs	50	0.75	P $2.0 \times 10^{19}$
Block	InP	300	1.35	P $1.8 \times 10^{18}$
Grading	InGaAsP, Q1.1	15	1.13	P $2.0 \times 10^{18}$
Grading	InGaAsP, Q1.4	15	0.89	P $2.0 \times 10^{18}$
Absorber	InGaAs	40	0.75	P $2.0 \times 10^{18}$
Absorber	InGaAs	30	0.75	P $1.0 \times 10^{18}$
Absorber	InGaAs	30	0.75	P $4.0 \times 10^{17}$
Absorber	InGaAs	100	0.75	N $1.0 \times 10^{16}$
Cliff & WG	InGaAsP, Q1.53	50	0.81	N $3.0 \times 10^{17}$
Drift & WG	InGaAsP, Q1.46	200	0.85	N $1.0 \times 10^{16}$
Grading & WG	InGaAsP, Q1.29	15	0.96	N $1.0 \times 10^{16}$
Grading & WG	InGaAsP, Q1.1	15	1.13	N $1.0 \times 10^{16}$
N contact	InP	850	1.35	N $1.0 \times 10^{19}$

Abstract

Data Availability

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Tables (3)

Applied Optics