Abstract
In this study, we demonstrate a novel, to the best of our knowledge, integrated indium phosphide (InP) and silicon nitride (${\rm Si}_3{\rm N}_4$) waveguide platform, which is based on interlayer coupling, to achieve heterogeneous integration of a photodetector and waveguide ring resonator firstly. In order to improve the gyro bias stability, the ${\rm Si}_3{\rm N}_4$ and InP waveguides were designed with a high polarization extinction ratio and ultra-low loss. Three-dimensional finite difference time domain methods are used to optimize the InP taper dimensions to provide efficient optical coupling between the ${\rm Si}_3{\rm N}_4$ and InP waveguides. The optical coupler with a length of 100 µm is designed to achieve optical coupling between the ${\rm Si}_3{\rm N}_4$ and InP waveguides while maintaining its state of polarization all the way from the taper waveguides. The coupling efficiency of the optimized interlayer coupler has been improved to about 99.5%.
© 2021 Optical Society of America
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