Abstract

An on-chip supercontinuum (SC) source spanning from 900 nm to 2000 nm has been experimentally presented and analyzed based on a ${\rm{G}}{{\rm{e}}_{11.5}}{\rm{A}}{{\rm{s}}_{24}}{{\rm{S}}_{64.5}}$ (GeAsS) planar waveguide at telecommunication wavelength. The nonlinear response parameter ($\gamma$) of the GeAsS waveguide is estimated to be ${\sim}{{12}}\;{\rm{/W/m}}$ at the pump wavelength using resonant grating waveguide (RGW) nonlinear refractive index (${{\rm{n}}_2} = {{2}} \times {{1}}{{{0}}^{- 18\:}}{{\rm{m}}^2}/{\rm{W}}$), which is measured by the z-scan technique. The dispersion of the waveguide is carefully engineered based on the refractive index of the GeAsS film where the film structure is confirmed by a Raman spectrum exhibiting consistency with the corresponding glass. The results suggest that the GeAsS glass is expected to be an ideal platform for on-chip devices.

© 2021 Optical Society of America

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