High-performance phoxonic cavity designs for enhanced acousto-optical interaction

Arafa H. Aly; Samar M. Shaban; Ahmed Mehaney

doi:10.1364/AO.420294

Applied Optics
Vol. 60,
Issue 11,
pp. 3224-3231
(2021)
•https://doi.org/10.1364/AO.420294

High-performance phoxonic cavity designs for enhanced acousto-optical interaction

Arafa H. Aly, Samar M. Shaban, and Ahmed Mehaney

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Arafa H. Aly, Samar M. Shaban, and Ahmed Mehaney, "High-performance phoxonic cavity designs for enhanced acousto-optical interaction," Appl. Opt. 60, 3224-3231 (2021)

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Abstract

Effective confinement of light and sound is achieved through a one-dimensional phoxonic crystal (PxC) cavity. In particular, co-localization of gigahertz phonons and infrared photons in a cavity created by introducing a defect inside a multilayer PxC has been performed. The incident elastic waves can control the refractive index variation of the dual phononic–photonic cavity layer. We also studied the acousto-optic (AO) effect in four AO materials, each located in the cavity layer between two identical Bragg mirrors. The cavities are designed to have high-quality factors for both photon and phonon resonances, which are proportional to their lifetime and allow for a much stronger photon–phonon interaction. The AO effect causes a shift in the optical mode of the photonic band gap. The values of the refractive index of the AO cavities layer are estimated as a function of time based on the elastic strain perturbation using the relevant photo-elastic relations. The phoxonic band gaps and transmission spectra for both unperturbed and elastically perturbed PxC structures are derived depending on the transfer matrix method. In our results, the selected AO cavity of ${\rm{PbMo}}{{\rm{O}}_4}$ provided the strongest AO coupling, in which the maximum wavelength shift of the resonant photonic modes reached 113.3 nm. In addition, 11.9 nm is the maximum displacement amplitude of the confinement elastic wave of the same nanocavity. The ${\rm{Te}}{{\rm{O}}_2}$ cavity provided the highest Q values for both photonic and phononic modes of 7093 and 175, respectively. We think this research could open the way to study the properties of linear elastic materials to design extremely miniaturized AO devices.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Solid Materials	$c_{l} (m / s)$	$ρ (k g / m^{3})$	$n (R I U)$	$p_{12}$
$S i O_{2}$	5970	2200	1.46	0.27
Si	8430	2330	3.46	0.01

Photonic Mode Symbol				$Δ λ$ (nm)		Phononic Mode Symbol
Photonic Mode Symbol	$ω_{t}$ (THz)	$Q_{t}$	$n_{w i d t h}$ (RIU)	A Mode	B Mode	Phononic Mode Symbol	$Ω$ $(G H z)$	Max. A (nm)
$α$	90.3	6791	0.136	113.3	62.8	A	4.724	11.9
$β$	114.2	743	0.075	60.7	33.7	B	5.414	7.478

Type of Cavity Layer	$S i O_{2}$	$T e O_{2}$	$T i O_{2}$	$P b M o O_{4}$
$n$	1.46	2.18	2.782	2.381
$c_{l}$ (m/s)	5970	4200	10079.5	3646.2
$α$ mode	80.54	95.3	82.6	90.31
$ω_{t}$ (THz)
$β$ mode			105.4	114.2
A mode	4.902	5.073	5.096	4.724
$Ω$ (GHz)
B mode				5.414
$α$ mode	2277	7093	3254	6791
$Q_{t}$
$β$ mode			4128	743
A mode	171.5	175.1	115.8	148
$Q_{n}$
B mode				146
Strain level	10E-3	10E-3	10E-3	10E-3
Max. A (nm)	3.208	2.99	2.967	11.9
Max. A (nm)	3.208	2.99	2.967	7.478
$n_w i d t h$ (RIU)	0.0097	0.021	0.025	0.136
$n_w i d t h$ (RIU)	0.0097	0.021	0.025	0.075
$α$ mode	12.6	17.8	19.7	113.3 and 62.8
$Δ λ$ (nm)
$β$ mode			15.7	60.7 and 33.7
Advantages	When the optical resonance frequency in the cavity increased to 18.3%, it increases $Δ λ$ to 41.3% with an approximation in the $Ω$ values in both materials.		They are linear elastic materials that have the most favorable choice for AO interaction. They support the maximum nonlinear optical modulation.
Disadvantages	The effect of AO interaction in $S i O_{2}$ on the optical modulation is the weakest.		The optical mode $β_{{P b M o O}_{4}}$ has the lowest value of $Q_{t}$ compared to the rest of the values. Hence, it reduces the photon storage time in the cavity.

Solid Materials	$c_{l} (m / s)$	$ρ (k g / m^{3})$	$n (R I U)$	$p_{12}$
$S i O_{2}$	5970	2200	1.46	0.27
Si	8430	2330	3.46	0.01

Photonic Mode Symbol				$Δ λ$ (nm)		Phononic Mode Symbol
Photonic Mode Symbol	$ω_{t}$ (THz)	$Q_{t}$	$n_{w i d t h}$ (RIU)	A Mode	B Mode	Phononic Mode Symbol	$Ω$ $(G H z)$	Max. A (nm)
$α$	90.3	6791	0.136	113.3	62.8	A	4.724	11.9
$β$	114.2	743	0.075	60.7	33.7	B	5.414	7.478

Abstract

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Applied Optics