Abstract
Toward the realization of ultralow-power-consumption on-chip optical interconnection, two types of membrane-based GaInAs/InP photodiodes were fabricated on Si host substrates by using benzocyclobutene bonding. A responsivity of 0.95 A/W was estimated with a conventional waveguide-type photodiode with an -μm-long absorption region. The fitting curves based on the experimental data indicated that an absorption efficiency above 90% could be achieved with a length of 10 μm. In addition, increased absorption per length of a photonic crystal waveguide-type photodiode was obtained because of the enhanced lateral optical confinement or the slow-light effect, enabling a further reduction in the device length.
© 2017 Optical Society of America
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