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Using a Cr:ZnS wafer as the saturable absorber, diode-pumped passively -switched mode-locking of a Tm:YAP laser at 1976 nm has been realized for the first time, to the best of our knowledge, and nearly 100% modulation depth of -switched mode-locking was achieved. The width of the mode-locked pulse was estimated to be about 980 ps with a repetition rate of 350 MHz within a roughly 300-ns-long -switched pulse envelope. A maximum output power of 940 mW was obtained, corresponding to the -switched pulse energy of 0.55 mJ. The emission wavelength evolution between the continuous-wave and -switched mode-locked operations was presented and discussed. The experimental results indicate that the Cr:ZnS absorber is a promising saturable absorber for passively -switched mode-locking operation around 2 μm.
© 2015 Optical Society of America
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