A custom IR spot scanning experiment was constructed to project subpixel spots on a mercury cadmium telluride focal plane array (FPA). The hardware consists of an FPA in a liquid nitrogen cooled Dewar, high precision motorized stages, a custom aspheric lens, and a 1.55 and 3.39 μm laser source. By controlling the position and intensity of the spot, characterizations of cross talk, saturation, blooming, and (indirectly) the minority carrier lifetime were performed. In addition, a Monte–Carlo-based charge diffusion model was developed to validate experimental data and make predictions. Results show very good agreement between the model and experimental data. Parameters such as wavelength, reverse bias, and operating temperature were found to have little effect on pixel crosstalk in the absorber layer of the detector. Saturation characterizations show that these FPAs, which do not have antiblooming circuitry, exhibit an increase in cross talk due to blooming at beyond the flux required for analog saturation.
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