Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target

Bo-Huei Liao; Chien-Cheng Kuo; Pin-Jen Chen; Cheng-Chung Lee

doi:10.1364/AO.50.00C106

Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target

Bo-Huei Liao, Chien-Cheng Kuo, Pin-Jen Chen, and Cheng-Chung Lee

Applied Optics
Vol. 50,
Issue 9,
pp. C106-C110
(2011)
•https://doi.org/10.1364/AO.50.00C106

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Bo-Huei Liao, Chien-Cheng Kuo, Pin-Jen Chen, and Cheng-Chung Lee, "Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target," Appl. Opt. 50, C106-C110 (2011)

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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Materials and process characterization (310.3840)
- Thin films, optical properties (310.6860)
- Thin films, other properties (310.6870)

About this Article
History
- Original Manuscript: July 30, 2010
- Revised Manuscript: October 15, 2010
- Manuscript Accepted: October 18, 2010
- Published: November 10, 2010

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Abstract

Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of ${CF}_{4} / O_{2}$ gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than $1.5 \times 10^{- 3}$ in the range from 400 to $800 nm$ when the ${CF}_{4} / O_{2}$ ratio was 0.375. The resistivity of fluorine-doped ${SnO}_{2}$ films ( $1.63 \times 10^{- 3} Ω cm$ ) deposited at $300 ° C$ was 27.9 times smaller than that of undoped ${SnO}_{2}$ ( $4.55 \times 10^{- 2} Ω cm$ ). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was $2.68 \times 10^{- 4} Ω cm$ , which increased by less than 39% at a $450 ° C$ annealing temperature for $1 h$ in air.

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${CF}_{4} / O_{2}$ Ratio	Deposition/Annealing Temperature ( $° C$ )	Sheet Resistivity ( $Ω / □$ )	Mobility ( ${cm}^{2} / V s$ )	Carrier Concentration ( ${cm}^{- 3}$ )	Average Transmittance ( $400 - 700 nm$ ) (%)	Resistivity ( $Ω cm$ )
0	300	1178	7.05	$1.95 \times 10^{19}$	76.83	$4.55 \times 10^{- 2}$
0.179	300	46.43	19	$2.02 \times 10^{20}$	80.00	$1.63 \times 10^{- 3}$
0.179	300/350 ( $1 h$ )	34.74	20.3	$2.50 \times 10^{20}$	80.48	$1.23 \times 10^{- 3}$
0.179	300/400 ( $1 h$ )	57.57	16.4	$2.09 \times 10^{20}$	78.41	$1.81 \times 10^{- 3}$

Film/Deposition Temperature	Power (W)	Ar Flow Rate (SCCM)^a	$O_{2}$ Flow Rate (SCCM)^a	${CF}_{4}$ Flow Rate (SCCM)^a	Average Transmittance (%)	Resistivity ( $Ω cm$ )
ITO ( $250 ° C$ )	600	72	2.7	0	83.25	$1.76 \times 10^{- 4}$
FTO ( $300 ° C$ )	100	52	19	3.5	80.48	$1.78 \times 10^{- 3}$

${CF}_{4} / O_{2}$ Ratio	Deposition/Annealing Temperature ( $° C$ )	Sheet Resistivity ( $Ω / □$ )	Mobility ( ${cm}^{2} / V s$ )	Carrier Concentration ( ${cm}^{- 3}$ )	Average Transmittance ( $400 - 700 nm$ ) (%)	Resistivity ( $Ω cm$ )
0	300	1178	7.05	$1.95 \times 10^{19}$	76.83	$4.55 \times 10^{- 2}$
0.179	300	46.43	19	$2.02 \times 10^{20}$	80.00	$1.63 \times 10^{- 3}$
0.179	300/350 ( $1 h$ )	34.74	20.3	$2.50 \times 10^{20}$	80.48	$1.23 \times 10^{- 3}$
0.179	300/400 ( $1 h$ )	57.57	16.4	$2.09 \times 10^{20}$	78.41	$1.81 \times 10^{- 3}$

Film/Deposition Temperature	Power (W)	Ar Flow Rate (SCCM)^a	$O_{2}$ Flow Rate (SCCM)^a	${CF}_{4}$ Flow Rate (SCCM)^a	Average Transmittance (%)	Resistivity ( $Ω cm$ )
ITO ( $250 ° C$ )	600	72	2.7	0	83.25	$1.76 \times 10^{- 4}$
FTO ( $300 ° C$ )	100	52	19	3.5	80.48	$1.78 \times 10^{- 3}$

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