Abstract

By coating with a carbon film and graphene sheet (GS) on position-sensitive detectors based on the metal–oxide–semiconductor structure, sensitivity, linearity, and saturation power are significantly improved. We attribute this enhancement of absorptivity to lasers. The improvement effect of carbon film is more obvious than that of GS coating because of GS’s high conductivity.

© 2011 Optical Society of America

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  1. W. Schottky, “Ueber den Entstehungsort der photoelektronen in kupfer-kupferoxydul-photozellen,” Phys. Z. 31, 913–925(1930).
  2. J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” in Proceedings of the IRE (IEEE, 1957), pp. 474–483.
    [CrossRef]
  3. R. H. Willens, “Photoelectronic and electronic properties of Ti/Si amorphous superlattices,” Appl. Phys. Lett. 49, 663–665 (1986).
    [CrossRef]
  4. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49, 1537–1539 (1986).
    [CrossRef]
  5. B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49, 1608–1610 (1986).
    [CrossRef]
  6. R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49, 1647–1648 (1986).
    [CrossRef]
  7. J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci.: Mater. Electron. 12, 387–393 (2001).
    [CrossRef]
  8. K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91, 081906 (2007).
    [CrossRef]
  9. D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85, 5073–5075 (2004).
    [CrossRef]
  10. J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” in Proceedings of IEEE Sensors (IEEE, 2002), pp. 836–840.
    [CrossRef]
  11. N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55, 792–794 (1989).
    [CrossRef]
  12. C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95, 263506 (2009).
    [CrossRef]
  13. C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96, 171102 (2010).
    [CrossRef]
  14. S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
    [CrossRef]
  15. H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008).
    [CrossRef]
  16. C. Ge, K. J. Jin, H. B. Lu, C. Wang, G. M. Zhao, L. L. Zhang, and G. Z. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150, 2114–2117 (2010).
    [CrossRef]
  17. S. Q. Xiao and H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16, 3798–3806 (2008).
    [CrossRef] [PubMed]
  18. S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
    [CrossRef]
  19. S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal–semiconductor junctions of CoxMnyO films and Si,” J. Phys. D 40, 5580–5583(2007).
    [CrossRef]

2010 (3)

C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96, 171102 (2010).
[CrossRef]

C. Ge, K. J. Jin, H. B. Lu, C. Wang, G. M. Zhao, L. L. Zhang, and G. Z. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150, 2114–2117 (2010).
[CrossRef]

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

2009 (1)

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95, 263506 (2009).
[CrossRef]

2008 (3)

S. Q. Xiao and H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16, 3798–3806 (2008).
[CrossRef] [PubMed]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008).
[CrossRef]

2007 (2)

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal–semiconductor junctions of CoxMnyO films and Si,” J. Phys. D 40, 5580–5583(2007).
[CrossRef]

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91, 081906 (2007).
[CrossRef]

2004 (1)

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85, 5073–5075 (2004).
[CrossRef]

2001 (1)

J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci.: Mater. Electron. 12, 387–393 (2001).
[CrossRef]

1989 (1)

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55, 792–794 (1989).
[CrossRef]

1986 (4)

R. H. Willens, “Photoelectronic and electronic properties of Ti/Si amorphous superlattices,” Appl. Phys. Lett. 49, 663–665 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49, 1537–1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49, 1608–1610 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49, 1647–1648 (1986).
[CrossRef]

1930 (1)

W. Schottky, “Ueber den Entstehungsort der photoelektronen in kupfer-kupferoxydul-photozellen,” Phys. Z. 31, 913–925(1930).

Bethea, C. G.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49, 1537–1539 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49, 1647–1648 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49, 1608–1610 (1986).
[CrossRef]

Brasen, D.

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49, 1608–1610 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49, 1647–1648 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49, 1537–1539 (1986).
[CrossRef]

Choi, H.

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

Fan, S.-Q.

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

Fang, B.

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

Florez, L. T.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55, 792–794 (1989).
[CrossRef]

Ge, C.

C. Ge, K. J. Jin, H. B. Lu, C. Wang, G. M. Zhao, L. L. Zhang, and G. Z. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150, 2114–2117 (2010).
[CrossRef]

Harbison, J. P.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55, 792–794 (1989).
[CrossRef]

Henry, J.

J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci.: Mater. Electron. 12, 387–393 (2001).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” in Proceedings of IEEE Sensors (IEEE, 2002), pp. 836–840.
[CrossRef]

Jeong, B.-S.

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

Jin, K. J.

C. Ge, K. J. Jin, H. B. Lu, C. Wang, G. M. Zhao, L. L. Zhang, and G. Z. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150, 2114–2117 (2010).
[CrossRef]

Jin, K.-J.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91, 081906 (2007).
[CrossRef]

Jin, Q. Y.

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
[CrossRef]

Kabra, D.

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85, 5073–5075 (2004).
[CrossRef]

Kim, C.

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

Kim, J.-J.

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

Ko, J.

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

Levine, B. F.

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49, 1647–1648 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49, 1608–1610 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49, 1537–1539 (1986).
[CrossRef]

Liao, L.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91, 081906 (2007).
[CrossRef]

Livingstone, J.

J. Henry and J. Livingstone, “A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures,” J. Mater. Sci.: Mater. Electron. 12, 387–393 (2001).
[CrossRef]

J. Henry and J. Livingstone, “A comparison of layered metal-semiconductor optical position sensitive detectors,” in Proceedings of IEEE Sensors (IEEE, 2002), pp. 836–840.
[CrossRef]

Lu, H. B.

C. Ge, K. J. Jin, H. B. Lu, C. Wang, G. M. Zhao, L. L. Zhang, and G. Z. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150, 2114–2117 (2010).
[CrossRef]

Lu, H.-B.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91, 081906 (2007).
[CrossRef]

Lu, J. J.

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
[CrossRef]

Meynadier, M. H.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55, 792–794 (1989).
[CrossRef]

Nahory, R. E.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55, 792–794 (1989).
[CrossRef]

Narayan, K. S.

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85, 5073–5075 (2004).
[CrossRef]

Paika, S.

S.-Q. Fan, B. Fang, H. Choi, S. Paika, C. Kim, B.-S. Jeong, J.-J. Kim, and J. Ko, “Efficiency improvement of dye-sensitized tandem solar cell by increasing the photovoltage of the back sub-cell,” Electrochim. Acta 55, 4642–4646 (2010).
[CrossRef]

Schottky, W.

W. Schottky, “Ueber den Entstehungsort der photoelektronen in kupfer-kupferoxydul-photozellen,” Phys. Z. 31, 913–925(1930).

Singh, T. B.

D. Kabra, T. B. Singh, and K. S. Narayan, “Semiconducting-polymer-based position-sensitive detectors,” Appl. Phys. Lett. 85, 5073–5075 (2004).
[CrossRef]

Tabatabaie, N.

N. Tabatabaie, M. H. Meynadier, R. E. Nahory, J. P. Harbison, and L. T. Florez, “Large lateral photovoltaic effect in modulation-doped AlGaAs/GaAs heterostructures,” Appl. Phys. Lett. 55, 792–794 (1989).
[CrossRef]

Wallmark, J. T.

J. T. Wallmark, “A new semiconductor photocell using lateral photoeffect,” in Proceedings of the IRE (IEEE, 1957), pp. 474–483.
[CrossRef]

Wang, C.

C. Ge, K. J. Jin, H. B. Lu, C. Wang, G. M. Zhao, L. L. Zhang, and G. Z. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150, 2114–2117 (2010).
[CrossRef]

Wang, H.

C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96, 171102 (2010).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95, 263506 (2009).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008).
[CrossRef]

S. Q. Xiao and H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16, 3798–3806 (2008).
[CrossRef] [PubMed]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal–semiconductor junctions of CoxMnyO films and Si,” J. Phys. D 40, 5580–5583(2007).
[CrossRef]

Wang, Z. H.

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
[CrossRef]

Willens, R. H.

R. H. Willens, “Photoelectronic and electronic properties of Ti/Si amorphous superlattices,” Appl. Phys. Lett. 49, 663–665 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate,” Appl. Phys. Lett. 49, 1537–1539 (1986).
[CrossRef]

B. F. Levine, R. H. Willens, C. G. Bethea, and D. Brasen, “Wavelength dependence of the lateral photovoltage in amorphous superlattice films of Si and Ti,” Appl. Phys. Lett. 49, 1608–1610 (1986).
[CrossRef]

R. H. Willens, B. F. Levine, C. G. Bethea, and D. Brasen, “High resolution photovoltaic position sensing with Ti/Si superlattices,” Appl. Phys. Lett. 49, 1647–1648 (1986).
[CrossRef]

Xia, Y. X.

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95, 263506 (2009).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal–semiconductor junctions of CoxMnyO films and Si,” J. Phys. D 40, 5580–5583(2007).
[CrossRef]

Xiao, S. Q.

S. Q. Xiao and H. Wang, “The Co-film-thickness dependent lateral photoeffect in Co-SiO2-Si metal-oxide-semiconductor structures,” Opt. Express 16, 3798–3806 (2008).
[CrossRef] [PubMed]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, Z. C. Zhao, and Y. X. Xia, “Large lateral photoeffect observed in metal–semiconductor junctions of CoxMnyO films and Si,” J. Phys. D 40, 5580–5583(2007).
[CrossRef]

Yang, G. Z.

C. Ge, K. J. Jin, H. B. Lu, C. Wang, G. M. Zhao, L. L. Zhang, and G. Z. Yang, “Mechanisms for the enhancement of the lateral photovoltage in perovskite heterostructures,” Solid State Commun. 150, 2114–2117 (2010).
[CrossRef]

Yang, G.-Z.

K.-J. Jin, K. Zhao, H.-B. Lu, L. Liao, and G.-Z. Yang, “Dember effect induced photovoltage in perovskite p-n heterojunctions,” Appl. Phys. Lett. 91, 081906 (2007).
[CrossRef]

Yu, C. Q.

C. Q. Yu and H. Wang, “Large near-infrared lateral photovoltaic effect observed in Co/Si metal-semiconductor structures,” Appl. Phys. Lett. 96, 171102 (2010).
[CrossRef]

C. Q. Yu, H. Wang, and Y. X. Xia, “Enhanced lateral photovoltaic effect in an improved oxide-metal-semiconductor structure of TiO2/Ti/Si,” Appl. Phys. Lett. 95, 263506 (2009).
[CrossRef]

H. Wang, S. Q. Xiao, C. Q. Yu, Y. X. Xia, Q. Y. Jin, and Z. H. Wang, “Correlation of magnetoresistance and lateral photovoltage in Co3Mn2O/SiO2/Si metal—oxide—semiconductor structure,” New J. Phys. 10, 093006 (2008).
[CrossRef]

S. Q. Xiao, H. Wang, C. Q. Yu, Y. X. Xia, J. J. Lu, Q. Y. Jin, and Z. H. Wang, “A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co-SiO2-Si,” New J. Phys. 10, 033018-1 (2008).
[CrossRef]

Zhang, L. L.

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Figures (3)

Fig. 1
Fig. 1

(a) Geometry of the MOS structure. (b) LPV under the illumination of different laser power ( 514 nm wavelength).

Fig. 2
Fig. 2

(a) Geometry of the GS on MOS structure. (b) Geometry of the carbon film on MOS structure.

Fig. 3
Fig. 3

(a) LPV under Au / SiO 2 / Si structure, C / Au / SiO 2 / Si structure and Graphene / Au / SiO 2 / Si structure. (b) LPV as a function of power when the laser irradiates on one electrode.

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