Abstract

High-power narrow-spectrum diode laser systems based on tapered gain media in an external cavity are demonstrated at $675\mathrm{nm}$. Two $2\mathrm{mm}$ long amplifiers are used, one with a $500\mathrm{\mu m}$ long ridge-waveguide section (device A), the other with a $750\mathrm{\mu m}$ long ridge-waveguide section (device B). Laser system A based on device A is tunable from 663 to $684\mathrm{nm}$ with output power higher than $0.55\mathrm{W}$ in the tuning range; as high as $1.25\mathrm{W}$ output power is obtained at $675.34\mathrm{nm}$. The emission spectral bandwidth is less than $0.05\mathrm{nm}$ throughout the tuning range, and the beam quality factor $M^2$ is 2.07 at an output power of $1.0\mathrm{W}$. Laser system B based on device B is tunable from 666 to $685\mathrm{nm}$. As high as $1.05\mathrm{W}$ output power is obtained around $675.67\mathrm{nm}$. The emission spectral bandwidth is less than $0.07\mathrm{nm}$ throughout the tuning range, and the beam quality factor $M^2$ is 1.13 at an output power of $0.93\mathrm{W}$. Laser system B is used as a pump source for the generation of $337.6\mathrm{nm}$ UV light by single-pass frequency doubling in a bismuth triborate (BIBO) crystal. An output power of $109\mathrm{\mu W}$ UV light, corresponding to a conversion efficiency of $0.026\%{\mathrm{W}}^{-1}$, is attained.

© 2010 Optical Society of America

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