Abstract

Silicon nitride (Si3N4) and silicon dioxide (SiO2) films were prepared by ion-assisted deposition, and a higher deposition rate was achieved for both films. The results of x-ray diffraction and transmission electron microscopy measurements showed that the films have amorphous structures. As measured by infrared (IR) spectrometry and x-ray photoelectron spectrometry, both stoichiometric films have extremely low hydrogen content. The IR optical constants of the films were determined by spectroscopic ellipsometry. Both films exhibited a low extinction coefficient at wavelengths from 2 to 7μm. The application of Si3N4 and SiO2 films on the IR interference coating is demonstrated.

© 2010 Optical Society of America

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