Abstract

Pixel crosstalk (CTK) consists of three components, optical CTK (OCTK), electrical CTK (ECTK), and spectral CTK (SCTK). The CTK has been classified into two groups: pixel-architecture dependent and pixel-architecture independent. The pixel-architecture-dependent CTK (PADC) consists of the sum of two CTK components, i.e., the OCTK and the ECTK. This work presents a short summary of a large variety of methods for PADC reduction. Following that, this work suggests a clear quantifiable definition of PADC. Three complementary metal-oxide-semiconductor (CMOS) image sensors based on different technologies were empirically measured, using a unique scanning technology, the S-cube. The PADC is analyzed, and technology trends are shown.

© 2010 Optical Society of America

Electrical crosstalk analysis in a pinned photodiode CMOS image sensor array

Mehdi Khabir, Hamzeh Alaibakhsh, and Mohammad Azim Karami
Appl. Opt. 60(31) 9640-9650 (2021)

Characterization and analysis of electrical crosstalk in a linear array of CMOS image sensors

Mehdi Khabir and Mohammad Azim Karami
Appl. Opt. 61(33) 9851-9859 (2022)

Microlens performance limits in sub-2μm pixel CMOS image sensors

Yijie Huo, Christian C. Fesenmaier, and Peter B. Catrysse
Opt. Express 18(6) 5861-5872 (2010)

Spatial optical crosstalk in CMOS image sensors integrated with plasmonic color filters

Yan Yu, Qin Chen, Long Wen, Xin Hu, and Hui-Fang Zhang
Opt. Express 23(17) 21994-22003 (2015)

Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement

Elie Cobo, Sébastien Massenot, Alexandre Le Roch, Franck Corbière, Vincent Goiffon, Pierre Magnan, and Jean-Luc Pelouard
Appl. Opt. 61(4) 960-968 (2022)