Abstract

We propose a new numerical model to analyze heat induced by two-photon absorption and free-carrier absorption, while high intensity optical pulses propagate along silicon-on-insulator (SOI) nanowaveguides (NWGs). Using this model, we demonstrate that such induced heat causes a shift in the amount of wavelength conversion and hence deteriorates the converter output characteristics for pulses in the picosecond regime. The wavelength shift induced by a pulse with maximum input intensity and full width at half-maximum of Imax=1.5×1010W.cm2 and TFWHM=30ps, propagating along a SOI NWG with an effective cross-sectional area of aeff=0.15μm2, is shown to be Δλs8pm. We also demonstrate that such a shift can be compensated by tuning the pump intensity down by approximately 6.33%.

© 2009 Optical Society of America

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