Abstract

GaN is a wide-bandgap semiconductor with still unexplored capabilities for ultraviolet detection. To exploit GaN properties better for ultraviolet detection, a metal–semiconductor–metal-type photodetector structure was designed and manufactured on a 2.2μm thin GaN membrane fabricated by micromachining techniques. As a result, a very low dark current (30pA at 3V) and a maximum responsivity of 14mA/W at a wavelength of 370nm were obtained.

© 2008 Optical Society of America

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