Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 μm

Abstract

We present experimental results of reflectance and transmittance measurements of infrared radiation by high-density photogenerated free carriers in polycrystalline germanium, polycrystalline silicon, and chemical vapor deposition zinc selenide windows. Linearly polarized 1064 and $532\text{\hspace{0.17em} nm}$ wavelength light from a Nd:YAG laser with a 130 ps pulse width were used to generate free carriers in the samples. Reflectance and transmittance were measured at a $10.6\mu \text{m}$ wavelength using a linearly polarized ${\text{CO}}_{\text{2}}$ laser.

© 2007 Optical Society of America

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