Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 μm

Abstract

We present experimental results of reflectance and transmittance measurements of infrared radiation by high-density photogenerated free carriers in polycrystalline germanium, polycrystalline silicon, and chemical vapor deposition zinc selenide windows. Linearly polarized 1064 and $532\text{\hspace{0.17em} nm}$ wavelength light from a Nd:YAG laser with a 130 ps pulse width were used to generate free carriers in the samples. Reflectance and transmittance were measured at a $10.6\mu \text{m}$ wavelength using a linearly polarized ${\text{CO}}_{\text{2}}$ laser.

© 2007 Optical Society of America

Laser-induced damage threshold at chemical vapor deposition–grown diamond surfaces for 200-ps CO₂ laser pulses

A. C. Chiang, Y. Y. Lin, Y. C. Huang, and M. Babzien
Opt. Lett. 27(3) 164-166 (2002)

Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells

Stephanie A. Claussen, Emel Tasyurek, Jonathan E. Roth, and David A. B. Miller
Opt. Express 18(25) 25596-25607 (2010)

Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser

Tadashi Okumura, Katsuya Oda, Junichi Kasai, Misuzu Sagawa, and Yuji Suwa
Opt. Express 24(9) 9132-9139 (2016)

Time resolved reflectance and transmittance for the noninvasive measurement of tissue optical properties

Michael S. Patterson, B. Chance, and B. C. Wilson
Appl. Opt. 28(12) 2331-2336 (1989)

Compact, 220-ps visible laser employing single-pass, cascaded frequency conversion in monolithic periodically poled lithium niobate

A. C. Chiang, Y. C. Huang, Y. W. Fang, and Y. H. Chen
Opt. Lett. 26(2) 66-68 (2001)