Abstract

The resolution of an angle-scanning technique for measuring transparent optical wafers is analyzed, and it is shown both theoretically and experimentally that subnanometer resolution can be readily achieved. Data are acquired simultaneously over the whole area of the wafer, producing two-dimensional thickness variation maps in as little as 10 s. Repeatabilities of 0.07nm have been demonstrated, and wafers of up to 100mm diameter have been measured, with 1mm or better spatial resolution. A technique for compensating wafer and system aberrations is incorporated and analyzed.

© 2007 Optical Society of America

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