Abstract

We have fabricated large, coarsely ruled, echelle patterns on silicon wafers by using photolithography and chemical-etching techniques. The grating patterns consist of 142-µm-wide, V-shaped grooves with an opening angle of 70.6°, blazed at 54.7°. We present a detailed description of our grating-fabrication techniques and the results of extensive testing. We have measured peak diffraction efficiencies of 70% at λ = 632.8 nm and conclude that the gratings produced by our method are of sufficient quality for use in high-resolution spectrographs in the visible and near IR (λ ≃ 500–5000 nm).

© 2000 Optical Society of America

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