Abstract

We report the development and characterization of an efficient diode-pumped surface-emitting semiconductor laser operating at ∼870 nm. By using a semiconductor Bragg reflector stack/multiple GaAs quantum well structure, mounted within a conventional laser cavity, we achieved single transverse mode laser output powers of 153 mW. Self-tuning over a 15-nm spectral range has been obtained.

© 1999 Optical Society of America

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