A phase-evaluation method of multiple-beam Fizeau patterns that combines two-beam phase-stepping algorithms with the moiré effect was previously reported [Appl. Opt. 34, 3639–3643 (1995)]. The method is based on a multiplicative moiré image-formation process obtained by the direct superposition of high-frequency multiple-beam Fizeau carrier fringes upon a transmission grating (working as a phase modulator). We present a comparison between this multiplicative moiré two-beam phase-stepping method and the well-known Fourier-transform method for the topographic measurement of an undoped silicon wafer. The discrepancy between the two methods yields a rms phase-difference value of the order of (∼2π/90).
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