Abstract

The influence of argon gas pressure (0.15–40 Pa) on the refractive indices n,k of dc planar-magnetron reactively sputtered cermet and amorphous semiconductor films has been investigated for a layer thickness of ~50 nm. Stainless steel–carbon and amorphous hydrogenated carbon layers with relatively low index n and stainless steel–silicon and amorphous hydrogenated silicon layers with relatively high index n are examined with a view to solar selective surface applications. The development of structural porosity with associated reduction in n for layers deposited at high argon pressure significantly improves the solar absorptance of surfaces incorporating stainless steel–silicon or amorphous hydrogenated silicon layers.

© 1983 Optical Society of America

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