Abstract

New experimental and analytical techniques are used to derive information on the electronic band structure of SiP₂, a semimetal having a pyrite structure. The ir reflectivity can be described by a two-carrier model having effective charge density to mass ratios of 0.152 and 0.0273 with relaxation times of 1.07 and 0.66 × 10⁻¹⁴ sec, respectively. This model yields a dc conductivity of 1.07 × 10⁶ mho/m in agreement with measured values. Interband transitions at 1.97 eV, 2.69 eV, 3.45 eV, 3.95 eV, and 4.42 eV were defined from structure in the imaginary part of the dielectric constant and from piezoreflectance data.

© 1972 Optical Society of America

Optical Properties of Silver Bromide*†

John J. White
J. Opt. Soc. Am. 62(2) 212-218 (1972)

New Method for Accurate Determination of Optical Constants

O. Hunderi
Appl. Opt. 11(7) 1572-1578 (1972)

Derivation of Optical Constants of Metals from Thin-Film Measurements at Oblique Incidence

J. E. Nestell and R. W. Christy
Appl. Opt. 11(3) 643-651 (1972)

Kramers-Kronig Analysis of Relative Reflectance Spectra Measured at an Oblique Angle

George M. Hale, Wayne E. Holland, and Marvin R. Querry
Appl. Opt. 12(1) 48-51 (1973)

Effect of Deposition Rate and Substrate Temperature on the Vacuum Ultraviolet Reflectance of MgF₂- and LiF-Overcoated Aluminum Mirrors

E. T. Hutcheson, G. Hass, and J. T. Cox
Appl. Opt. 11(10) 2245-2248 (1972)