Interferometric sensor for detection of surface-bound bioreactions

Albrecht Brandenburg; Ralf Krauter; Christa Künzel; Monika Stefan; Heinrich Schulte

doi:10.1364/AO.39.006396

Interferometric sensor for detection of surface-bound bioreactions

Albrecht Brandenburg, Ralf Krauter, Christa Künzel, Monika Stefan, and Heinrich Schulte

Applied Optics
Vol. 39,
Issue 34,
pp. 6396-6405
(2000)
•https://doi.org/10.1364/AO.39.006396

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Albrecht Brandenburg, Ralf Krauter, Christa Künzel, Monika Stefan, and Heinrich Schulte, "Interferometric sensor for detection of surface-bound bioreactions," Appl. Opt. 39, 6396-6405 (2000)

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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Sensors (130.6010)
- Systems (130.6750)
- Integrated optics devices (230.3120)
- Waveguides, channeled (230.7380)

About this Article
History
- Original Manuscript: August 7, 2000
- Revised Manuscript: August 7, 2000
- Published: December 1, 2000

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Abstract

An integrated optical interferometer for direct detection of affinity reactions is presented. A modern version of a Young’s interferometer is built with a waveguide structure as beam splitter and as sensing element. Resistive waveguides were produced by plasma-enhanced chemical vapor deposition of silicon oxinitride. At the output of this device a fringe pattern is detected by a CCD line camera. The adsorption of molecules on top of the waveguides is observed with a detection limit of 750 fg/mm². The resolvable variation of effective refractive index is 9 × 10^-8.

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Parameter	Value
Substrate index (SiO₂)	n _s = 1.46
Film index (Si_xO_yN_z)	n _f = 1.57
Cover index (H₂O)	n _c = 1.33
Film thickness	t _f = 400 nm

Parameter	TE Polarization	TM Polarization
Effective refractive index	n _eff = 1.50808	n _eff = 1.50029
Thickness limit for monomode operation (nm)	t _f ≤ 688	t _f ≤ 710
Cutoff thickness of waveguide	t _f = 140	t _f = 168
Relative intensity at boundary (%)	I _s/I _m = 27	I _s/I _m = 19
Evanescent field half-width (nm)	d _1/2 = 49	d _1/2 = 50
Relative power in evanescent field (%)	P _eva/P _tot = 4.8	P _eva/P _tot 4.6
Sensitivity constants	∂n _eff/∂n _c = 4.2 × 10 ^-2	∂n _eff/∂n _c = 6.3 × 10 ^-2
	∂n _eff/∂t _ad = 7.5 × 10^-5/nm	∂n _eff/∂t _ad = 9.4 × 10^-5/nm

Material	Gas Flow (%)			Refractive Index	Thickness (nm)	Effective Refractive Index
Material	SiH₄	N₂O	NH₃	Refractive Index	Thickness (nm)	TE	TM
Silicon nitride	1.3	0.0	1.3	1.92	153
	1.3	1.3	1.3	1.74	185	1.4911
	1.3	1.9	0.6	1.72	195	1.5491	1.4999
	1.3	2.6	0.0	1.69	210	1.5491	1.5105
Silicon oxinitride	1.2	5.0	0.0	1.65	220
	1.2	7.3	0.0	1.63	233	1.5062	1.4842
	1.3	7.8	0.0	1.62	234
	1.2	12.3	0.0	1.59	248
	1.3	15.4	0.0	1.57	258	1.4777	1.4674

Polarization	Theory	Experimental Results
TE	0.04234	0.049± 0.001 for 0.29 × 10^-4 ≤ Δn _c ≤ 1.43 × 10 ^-4
		0.041± 0.002 for 1.43 × 10^-4 ≤ Δn _c ≤ 7.15 × 10 ^-4
TM	0.06260	0.060± 0.002 for 0.29 × 10^-4 ≤ Δn _c ≤ 1.43 × 10 ^-4
		0.064± 0.001 for 1.43 × 10^-4 ≤ Δn _c ≤ 7.15 × 10 ^-4

Parameter	Value
Effective refractive index	9 × 10^-8
Surface coverage	750 fg/mm²
Concentration IgG	1.3 × 10^-10 M (50 ng/ml)

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