Abstract

In this Letter, we report the enhanced radiative recombination output from an AlGaAs/GaAs heterojunction bipolar transistor with InAs quantum dots embedded in the base region to form a quantum-dot light-emitting transistor (QDLET) grown by molecular beam epitaxy systems. For the device with a $100\mathrm{\mu m}\times 100\mathrm{\mu m}$ emitter area, we demonstrate the dual output characteristics with an electrical output and an optical output when the device is operating in the common-emitter configuration. The quantum-dot light-emitting transistor exhibits a base recombination radiation in the near-infrared spectral range with a dominant peak at $\lambda$ of 1100 nm.

© 2015 Optical Society of America

Electrically pumped continuous-wave 1.3  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si

Alan Y. Liu, Jon Peters, Xue Huang, Daehwan Jung, Justin Norman, Minjoo L. Lee, Arthur C. Gossard, and John E. Bowers
Opt. Lett. 42(2) 338-341 (2017)

Quantum dot semiconductor disk laser at 1.3  μm

Antti Rantamäki, Grigorii S. Sokolovskii, Sergey A. Blokhin, Vladislav V. Dudelev, Ksenia K. Soboleva, Mikhail A. Bobrov, Alexander G. Kuzmenkov, Alexey P. Vasil’ev, Andrey G. Gladyshev, Nikolai A. Maleev, Victor M. Ustinov, and Oleg Okhotnikov
Opt. Lett. 40(14) 3400-3403 (2015)

Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon

Yating Wan, Qiang Li, Alan Y. Liu, Arthur C. Gossard, John E. Bowers, Evelyn L. Hu, and Kei May Lau
Opt. Lett. 41(7) 1664-1667 (2016)

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Ting Wang, Huiyun Liu, Andrew Lee, Francesca Pozzi, and Alwyn Seeds
Opt. Express 19(12) 11381-11386 (2011)

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

Mingchu Tang, Siming Chen, Jiang Wu, Qi Jiang, Vitaliy G. Dorogan, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Alwyn Seeds, and Huiyun Liu
Opt. Express 22(10) 11528-11535 (2014)