Abstract

It has been shown that strong optical injection locking can significantly enhance the resonance frequency of semiconductor lasers. In this Letter, we describe the trade-off between the maximum resonance frequency enhancement and the quality factor $\left(Q\right)$ of the lossless laser cavity and show that the time–bandwidth product (product of photon lifetime and maximum resonance frequency) is equal to one half the square root of the external power injection ratio. The theoretical model agrees well with our experimental data.

© 2007 Optical Society of America

Strong optical injection-locked semiconductor lasers demonstrating >100-GHz resonance frequencies and 80-GHz intrinsic bandwidths

Erwin K. Lau, Xiaoxue Zhao, Hyuk-Kee Sung, Devang Parekh, Connie Chang-Hasnain, and Ming C. Wu
Opt. Express 16(9) 6609-6618 (2008)

Frequency-sweep generation by resonant self-injection locking

Joerg Troger, Luc Thévenaz, and Philippe Robert
Opt. Lett. 24(21) 1493-1495 (1999)

20W of continuous-wave sodium D₂ resonance radiation from sum-frequency generation with injection-locked lasers

Joshua C. Bienfang, Craig A. Denman, Brent W. Grime, Paul D. Hillman, Gerald T. Moore, and John M. Telle
Opt. Lett. 28(22) 2219-2221 (2003)

Power scaling and frequency stabilization of an injection-locked Nd:YAG rod laser

Russell F. Teehan, Joshua C. Bienfang, and Craig A. Denman
Appl. Opt. 39(18) 3076-3084 (2000)

Laser frequency fixation by multimode optical injection locking

Arfan Sindhu Tistomo and Sangyoun Gee
Opt. Express 19(2) 1081-1090 (2011)