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Temperature characteristics of signal shapers of infrared images based on metal-insulator-semiconductor structures

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Abstract

This paper discusses the temperature characteristics of signal shapers of infrared images based on metal-insulator-semiconductor structures in the nonequilibrium depletion regime. The possibilities of creating IR phototargets for vidicons sensitive in the 3.5-5.5-µm region are studied. © 2004 Optical Society of America

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