Abstract

Improving the sensitivity of infrared detectors is an essential step for future applications, including satellite- and terrestrial-based systems. We investigate nanoantenna-enabled detectors (NEDs) in the infrared, where the nanoantenna arrays play a fundamental role in enhancing the level of absorption within the active material of a photodetector. The design and optimization of nanoantenna-enabled detectors via full-wave simulations is a challenging task given the large parameter space to be explored. Here, we present a fast and accurate fully analytic circuit model of patch-based NEDs. This model allows for the inclusion of real metals, realistic patch thicknesses, non-absorbing spacer layers, the active detector layer, and absorption due to higher-order evanescent modes of the metallic array. We apply the circuit model to the design of NED devices based on Type II superlattice absorbers, and show that we can achieve absorption of $\sim 70\%$ of the incoming energy in subwavelength ($\sim \lambda /5$) absorber layers. The accuracy of the circuit model is verified against full-wave simulations, establishing this model as an efficient design tool to quickly and accurately optimize NED structures.

© 2018 Optical Society of America

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