Abstract
We present a novel (to our knowledge) method to passively Q switch monolithic semiconductor diode lasers using a Bragg reflector filled with a polymer exhibiting the Kerr effect. We present numerical modeling of such devices that display Q switching. We numerically characterize the pulsed laser output in terms of repetition frequency, pulse power, and pulse energy. We also examine the influence of spontaneous emission strength on pulse dynamics. Advantages of this technique include higher repetition rates and very short pulses.
© 2005 Optical Society of America
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