Abstract
We characterize a new commercial, back-illuminated reach-through silicon single-photon
avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose
of photon counting. We show that for this sensor a significant interplay exists between dark
counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes
requiring a careful optimization tailored for a specific application. We find that a large flat
plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm
and timing precision down to 150 ps full-width at half-maximum are the main distinguishing
characteristics of this SPAD.
© 2013 IEEE
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