Abstract
Thin-films of copper oxide (Cu<sub>x</sub>O) were sputtered from a
metallic copper (Cu) target and studied as a function of oxygen partial pressure
(O<sub>PP</sub>). A metallic Cu film with cubic structure obtained from 0%
O<sub>PP</sub> has been transformed to cubic Cu<sub>2</sub>O phase
for the increase in O<sub>PP</sub> to 9% but then changed to monoclinic CuO phase
(for O<sub>PP</sub> ≥ 25%). The variation in crystallite size (calculated from
x-ray diffraction data) was further substantiated by the variation in grain size
(surface microstructures). The Cu<sub>x</sub>O films produced with
O<sub>PP</sub> ranging between 9% and 75% showed p-type behavior, which were
successfully applied to produce thin-film transistors.
© 2011 IEEE
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