Abstract
In this paper, we have studied the stability of polymorphous silicon (pm-Si:H)
and μc-Si:F:H bottom gate thin-film transistors (TFTs)
by combining degradation and relaxation experiments under various stress conditions. We
report on polymorphous silicon (pm-Si:H) TFTs with ΔV<sub>TH</sub>=1 V
after 10 h of stress and μc-Si:F:H TFTs with superior
stability, which show a ΔV<sub>TH</sub> of only 0.05 V under stress conditions
similar to those encountered in active-matrix operation regime (V<sub>G</sub>=12 V
and V<sub>D</sub>=10 V). Relaxation studies show that the quality of the interface
between silicon nitride and pm-Si:H (or μc-Si:F:H)
controls the stability at short stress times. Interestingly, the deposition conditions
of the semiconductor layer seem to modify the quality of the a-SiN:H and thus the
stability of the interface.
© 2011 IEEE
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